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IRF820AS价格

参考价格:¥4.8542

型号:IRF820ASPBF 品牌:Vishay 备注:这里有IRF820AS多少钱,2026年最近7天走势,今日出价,今日竞价,IRF820AS批发/采购报价,IRF820AS行情走势销售排行榜,IRF820AS报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF820AS

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VISHAYVishay Siliconix

威世威世科技公司

IRF820AS

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

VISHAYVishay Siliconix

威世威世科技公司

IRF820AS

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanch

IRF

IRF820AS

Power MOSFET

Low Gate Charge Qg Results in Simple Drive Requirement\nImproved Gate, Avalanche and Dynamic dV/dt Ruggedness\nFully Characterized Capacitance and Avalanche Voltage and Current;

VISHAYVishay Siliconix

威世威世科技公司

IRF820AS

SMPS MOSFET

INFINEON

英飞凌

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V

IRF

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:242.26 Kbytes Page:11 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

MOTOROLA

摩托罗拉

8/16-bit Data Bus Flash Memory Card

DESCRIPTION The MF8XXX-GMCAVXX is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory IC’s as common memory and a 64-kilobit electrically erasable and programmable read only memory as attribute memory. The MF8XXX-GNCAVXX i

MITSUBISHI

三菱电机

JFET RF AMPLIFIER

JFET RF AMPLIFIER N-CHANNEL - DEPLETION

MOTOROLA

摩托罗拉

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

MOTOROLA

摩托罗拉

ULTRAFAST RECTIFIER 8 AMPERES 200 VOLTS

SWITCHMODE Power Rectifier Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 ns Recovery Times • 150°C Operating Junction Temperature • Epoxy Meets UL94, VO @ 1/8″ • High Temperature

MOTOROLA

摩托罗拉

IRF820AS产品属性

  • 类型

    描述

  • 型号

    IRF820AS

  • 功能描述

    MOSFET N-CH 500V 2.5A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-5-19 11:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/IR
26+
SOT666
86720
全新原装正品价格最实惠 假一赔百
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
IR
25+
TO263
9000
只做原装正品 有挂有货 假一赔十
IR
22+
D2-PAK
9450
原装正品,实单请联系
VISHAY/威世
23+
D2PAK
32365
原厂授权一级代理,专业海外优势订货,价格优势、品种
VISHAY/威世通
20+
na
65790
原装优势主营型号-可开原型号增税票
FUJITSU/富士通
23+
TO-220F
69820
终端可以免费供样,支持BOM配单!
VBsemi
23+
TO263
50000
全新原装正品现货,支持订货
IR
2015+
D2-Pak
12500
全新原装,现货库存长期供应
IR
最新
TO-263
6896
原装进口现货库存专业工厂研究所配单供货

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