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型号 功能描述 生产厂家 企业 LOGO 操作
IRF7N65

MOSFET

GlobalSemi

7 Amps, 650 Volts 7 Amps, 650 Volts

DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

650V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology.

FAIRCHILD

仙童半导体

650V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

FAIRCHILD

仙童半导体

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

IRF7N65产品属性

  • 类型

    描述

  • VDS:

    650V

  • IDS:

    7A

  • VGS:

    ±30V

  • Rds(on):

    1.5Ω

  • IDM:

    28A

  • PD:

    45W-125W

更新时间:2026-8-22 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO220F
8000
专注配单,只做原装进口现货
IR
23+
TO220F
7000
IR
22+
TO220F
6000
终端可免费供样,支持BOM配单
INFINEON/英飞凌
23+
TO-220F
89630
当天发货全新原装现货
AN
24+
TO-220F
5000
全现原装公司现货
AN
25+
TO-220F
10000
原装现货假一罚十
AN
20+
TO-220F
182
芯为深仓现货

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