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IRF770价格
参考价格：￥4.8898
型号：IRF7700TRPBF 品牌：IR 备注：这里有IRF770多少钱，2025年最近7天走势，今日出价，今日竞价，IRF770批发/采购报价，IRF770行情走势销售排行榜，IRF770报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power MOSFET(Vdss=-20V) Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an e | IRF |   | ||
HEXFET짰 Power MOSFET Ultra Low On-Resistance Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an e | IRF | | ||
Power MOSFET(Vdss=-12V) Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex | IRF | | ||
HEXFET짰 Power MOSFET Ultra Low On-Resistance Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex | IRF | | ||
Ultra Low On-Resistance Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex | IRF | | ||
Ultra Low On-Resistance Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex | IRF | | ||
Ultra Low On-Resistance Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr | IRF | | ||
Power MOSFET(Vdss=-12V) Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr | IRF | | ||
HEXFETPower MOSFET Ultra Low On-Resistance 1.8V Rated Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr | IRF | | ||
HEXFET Power MOSFET Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr | IRF | | ||
Ultra Low On-Resistance Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr | IRF | | ||
Ultra Low On-Resistance Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr | IRF | | ||
Power MOSFET(Vdss=-40V) Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex | IRF | | ||
HEXFETPower MOSFET Ultra Low On-Resistance Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex | IRF | | ||
Ultra Low On-Resistance Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex | IRF | | ||
Power MOSFET(Vdss=-40V) Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr | IRF | | ||
HEXFETPower MOSFET Ultra Low On-Resistance Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr | IRF | | ||
Power MOSFET(Vdss=-30V) Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex | IRF | | ||
HEXFET짰 Power MOSFET Ultra Low On-Resistance Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex | IRF | | ||
Ultra Low On-Resistance Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex | IRF | | ||
Power MOSFET(Vdss=-30V) Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex | IRF | | ||
HEXFET짰 Power MOSFET Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex | IRF | | ||
Ultra Low On-Resistance Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex | IRF | | ||
Ultra Low On-Resistance Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex | IRF | | ||
Power MOSFET(Vdss=-20V) Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an ext | IRF | | ||
HEXFET짰 Power MOSFET Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr | IRF | | ||
Power MOSFET(Vdss=-12V) | Infineon 英飞凌 | | ||
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (1.2mm) Available in Tape & Reel Lead-Free Halogen-Free 文件：243.43 Kbytes Page：9 Pages | IRF | | ||
Power MOSFET(Vdss=-40V) | Infineon 英飞凌 | | ||
Power MOSFET(Vdss=-40V) | Infineon 英飞凌 | | ||
HEXFET Power MOSFET 文件：198.13 Kbytes Page：9 Pages | IRF | | ||
Ultra Low On-Resistance 文件：239.91 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Ultra Low On-Resistance 文件：242.51 Kbytes Page：8 Pages | IRF | | ||
Ultra Low On-Resistance 文件：242.14 Kbytes Page：8 Pages | IRF | | ||
Single Band LNA and Mixer FEIC Introduction The MC13770 is a single band front-end IC designed for wireless receiver applications. It contains a low noise LNA and a high linearity mixer. The LNA is integrated with a bypass switch to preserve input intercept performance. The device is fabricated using Freescales Advanced RF BiC | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
Single In-Line Conformal 文件：91.16 Kbytes Page：3 Pages | CTS 西迪斯 | | ||
Miniature connector 文件：309.09 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Color Monitor 文件：1.37882 Mbytes Page：43 Pages | Samsung 三星 | | ||
Waveguide to Coaxial Adapter 文件：179.17 Kbytes Page：5 Pages | AAC | |
IRF770产品属性
- 类型
描述
- 型号
IRF770
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
HEXFET? Power MOSFET Ultra Low On-Resistance
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
8469 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
P |
06 |
140 |
||||
IOR |
25+23+ |
TSSOP8 |
30101 |
绝对原装正品全新进口深圳现货 |
|||
IR |
2223+ |
SOP-8 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ir |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
IR |
22+ |
TSSOP-8 |
16000 |
全新原装现货!自家库存! |
|||
IR |
17+ |
TSSOP |
6200 |
100%原装正品现货 |
|||
Infineon Technologies |
22+ |
8TSSOP |
9000 |
原厂渠道,现货配单 |
|||
IR |
25+ |
6 |
860000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/IR |
2023+ |
SOP-8 |
4938 |
一级代理优势现货,全新正品直营店 |
IRF770芯片相关品牌
IRF770规格书下载地址
IRF770参数引脚图相关
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- IRF7665S2TR1PBF
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- IRF7607
- IRF7606TRPBF-CUTTAPE
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- IRF7606TR
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- IRF750A
- IRF7509TRPBF-CUTTAPE
- IRF7509TRPBF
- IRF7509
- IRF7507TRPBF-CUTTAPE
- IRF7507TRPBF
- IRF7507
- IRF7506TRPBF-CUTTAPE
- IRF7506TRPBF
- IRF7506
- IRF7504TRPBF-CUTTAPE
- IRF7504
- IRF7503
- IRF7501
- IRF7495
- IRF7494
- IRF7493
- IRF7492
- IRF7491
IRF770数据表相关新闻
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2019-7-17
DdatasheetPDF页码索引
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