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位置：首页 > IC中文资料第2519页 > IRF770

IRF770价格

参考价格：￥4.8898

型号：IRF7700TRPBF 品牌：IR 备注：这里有IRF770多少钱，2026年最近7天走势，今日出价，今日竞价，IRF770批发/采购报价，IRF770行情走势销售排行榜，IRF770报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF7700

Power MOSFET(Vdss=-20V)

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an e

IRF

IRF7700GPBF

HEXFET짰 Power MOSFET Ultra Low On-Resistance

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an e

IRF

IRF7700PBF

IRF7700

l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (

INFINEON

英飞凌

IRF7701

Power MOSFET(Vdss=-12V)

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex

IRF

IRF7701GPBF

HEXFET짰 Power MOSFET Ultra Low On-Resistance

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex

IRF

IRF7701PBF

Ultra Low On-Resistance

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex

IRF

IRF7701TR

Ultra Low On-Resistance

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex

IRF

IRF7702

Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr

IRF

IRF7702

Power MOSFET(Vdss=-12V)

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr

IRF

IRF7702GPBF

HEXFETPower MOSFET Ultra Low On-Resistance 1.8V Rated

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr

IRF

IRF7702PBF

HEXFET Power MOSFET

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr

IRF

IRF7702TR

Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr

IRF

IRF7702TRPBF

Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr

IRF

IRF7703

Power MOSFET(Vdss=-40V)

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

IRF7703GPBF

HEXFETPower MOSFET Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

IRF7703PBF

Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

IRF7704

Power MOSFET(Vdss=-40V)

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr

IRF

IRF7704GPBF

HEXFETPower MOSFET Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr

IRF

IRF7705

Power MOSFET(Vdss=-30V)

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

IRF7705GPBF

HEXFET짰 Power MOSFET Ultra Low On-Resistance

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

IRF7705PBF

Ultra Low On-Resistance

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

IRF7706

Power MOSFET(Vdss=-30V)

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

IRF7706GPBF

HEXFET짰 Power MOSFET

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

IRF7706PBF

Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

IRF7706TRPBF

Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

IRF7707

Power MOSFET(Vdss=-20V)

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an ext

IRF

IRF7707PBF

HEXFET짰 Power MOSFET

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr

IRF

IRF7701

Power MOSFET(Vdss=-12V)

INFINEON

英飞凌

IRF7702

Power MOSFET(Vdss=-12V)

INFINEON

英飞凌

IRF7702GPBF

Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (1.2mm) Available in Tape & Reel Lead-Free Halogen-Free

文件：243.43 Kbytes Page：9 Pages

IRF

IRF7703

Power MOSFET(Vdss=-40V)

INFINEON

英飞凌

IRF7704PBF

HEXFET Power MOSFET

文件：198.13 Kbytes Page：9 Pages

IRF

IRF7705PBF

Ultra Low On-Resistance

文件：239.91 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF7707GPBF

Ultra Low On-Resistance

文件：242.51 Kbytes Page：8 Pages

IRF

IRF7707TRPBF

Ultra Low On-Resistance

文件：242.14 Kbytes Page：8 Pages

IRF

AR770HT

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 3870 A Surge current 50 kA

POSEICO

AR770LT

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 4230 A Surge current 50 kA

POSEICO

BUL770

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

POINN

TIPL770

NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 850 Volt Blocking Capability ● 50 W at 25°C Case Temperature

POINN

VN770

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS

DESCRIPTION The VN770 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology. Th

STMICROELECTRONICS

意法半导体

IRF770产品属性

  • 类型

    描述

  • 型号

    IRF770

  • 功能描述

    MOSFET P-CH 20V 8.6A 8-TSSOP

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRF770供应商更多...

更新时间：2026-5-24 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市一线半导体有限公司
IRF014NTR
IR
24+
SOT-223
59
询价
齐创科技(上海,北京,青岛)有限公司
IRF010
INR
23+
TO-3
5000
原装正品,假一罚十
询价
天津市博通航睿技术有限公司
IRF
IR
23+
263
7000
询价
深圳市赛尔通科技有限公司
IRF002
IR
23+
65480
询价
深圳市能元时代电子有限公司
IRF010
INR
23+
TO-3
44353
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
深圳市河锋鑫科技有限公司
IRF
IR
22+
263
6000
终端可免费供样,支持BOM配单
询价
贸泽芯城（深圳）电子科技有限公司
IRF01EBR47M
VISHAY/威世
23+
ThroughHole
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市勤思达科技有限公司
IRF010
IR
1415+
TO-252
28500
全新原装正品,优势热卖
询价
芯有半导体（深圳）有限公司
IRF002
IR
05+
原厂原装
4291
只做全新原装真实现货供应
询价
上海意淼电子科技有限公司
IRF=95209520
FSC
23+
NA
6500
全新原装假一赔十
询价

IRF770芯片相关品牌

IRF770规格书下载地址

IRF770参数引脚图相关

IRF770数据表相关新闻

DdatasheetPDF页码索引

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