HEXFET짰 Power MOSFET

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

HEXFET® Power MOSFET

3 V/5 V, 1 mW, 2-/3-Channel, 16-Bit, Sigma-Delta ADCs

FEATURES AD7705: 2 fully differential input channel ADCs AD7706: 3 pseudo differential input channel ADCs 16 bits no missing codes 0.003% nonlinearity Programmable gain front end: gains from 1 to 128 3-wire serial interface SPI®-, QSPI™-, MICROWIRE™-, and DSP-compatible Schmitt-trigger

3 V/5 V, 1 mW 2-/3-Channel 16-Bit, Sigma-Delta ADCs

GENERAL DESCRIPTION The AD7705/AD7706 are complete analog front ends for low frequency measurement applications. These 2-/3-channel devices can accept low level input signals directly from a transducer and produce serial digital output. The devices employ a Σ-Δ conversion technique to realize up

3 V/5 V, 1 mW 2-/3-Channel 16-Bit, Sigma-Delta ADCs

GENERAL DESCRIPTION The AD7705/AD7706 are complete analog front ends for low frequency measurement applications. These 2-/3-channel devices can accept low level input signals directly from a transducer and produce serial digital output. The devices employ a Σ-Δ conversion technique to realize up

3 V/5 V, 1 mW, 2-/3-Channel

文件：395.77 Kbytes Page：44 Pages

3 V/5 V, 1 mW, 2-/3-Channel, 16-Bit, Sigma-Delta ADCs

文件：401.94 Kbytes Page：44 Pages