型号 功能描述 生产厂家 企业 LOGO 操作
IRF7705

Power MOSFET(Vdss=-30V)

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

IRF7705

Power MOSFET(Vdss=-30V)

Infineon

英飞凌

HEXFET짰 Power MOSFET Ultra Low On-Resistance

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

Ultra Low On-Resistance

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

Ultra Low On-Resistance

文件:239.91 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

3 V/5 V, 1 mW 2-/3-Channel 16-Bit, Sigma-Delta ADCs

GENERAL DESCRIPTION The AD7705/AD7706 are complete analog front ends for low frequency measurement applications. These 2-/3-channel devices can accept low level input signals directly from a transducer and produce serial digital output. The devices employ a Σ-Δ conversion technique to realize up

AD

亚德诺

SUPPLY-VOLTAGE SUPERVISORS

文件:346.14 Kbytes Page:17 Pages

TI

德州仪器

SUPPLY-VOLTAGE SUPERVISORS

文件:346.14 Kbytes Page:17 Pages

TI

德州仪器

SUPPLY-VOLTAGE SUPERVISORS

文件:388.67 Kbytes Page:18 Pages

TI

德州仪器

SUPPLY-VOLTAGE SUPERVISORS

文件:388.67 Kbytes Page:18 Pages

TI

德州仪器

IRF7705产品属性

  • 类型

    描述

  • 型号

    IRF7705

  • 功能描述

    MOSFET P-CH 30V 8A 8-TSSOP

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-11-21 12:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
IR
2025+
SOP8
3750
全新原厂原装产品、公司现货销售
IR
25+
TSSOP8
2717
全新原装正品支持含税
IR
23+
TSSOP8
3000
原装正品假一罚百!可开增票!
IOR
25+23+
TSSOP8
30100
绝对原装正品全新进口深圳现货
IR
23+
TSSOP-8
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
23+
TSSOP8
50000
全新原装正品现货,支持订货
IR
25+
TSSOP-8
25000
全新原装现货,假一赔十
IOR
2023+
SOP-8
5800
进口原装,现货热卖
IR
2023+
TSSOP-8
53500
正品,原装现货

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