型号 功能描述 生产厂家 企业 LOGO 操作
IRF7706

Power MOSFET(Vdss=-30V)

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

IRF7706

Power MOSFET(Vdss=-30V)

Infineon

英飞凌

HEXFET짰 Power MOSFET

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

IRF

HEXFET® Power MOSFET

Infineon

英飞凌

3 V/5 V, 1 mW, 2-/3-Channel, 16-Bit, Sigma-Delta ADCs

FEATURES AD7705: 2 fully differential input channel ADCs AD7706: 3 pseudo differential input channel ADCs 16 bits no missing codes 0.003% nonlinearity Programmable gain front end: gains from 1 to 128 3-wire serial interface SPI®-, QSPI™-, MICROWIRE™-, and DSP-compatible Schmitt-trigger

AD

亚德诺

3 V/5 V, 1 mW 2-/3-Channel 16-Bit, Sigma-Delta ADCs

GENERAL DESCRIPTION The AD7705/AD7706 are complete analog front ends for low frequency measurement applications. These 2-/3-channel devices can accept low level input signals directly from a transducer and produce serial digital output. The devices employ a Σ-Δ conversion technique to realize up

AD

亚德诺

3 V/5 V, 1 mW 2-/3-Channel 16-Bit, Sigma-Delta ADCs

GENERAL DESCRIPTION The AD7705/AD7706 are complete analog front ends for low frequency measurement applications. These 2-/3-channel devices can accept low level input signals directly from a transducer and produce serial digital output. The devices employ a Σ-Δ conversion technique to realize up

AD

亚德诺

3 V/5 V, 1 mW, 2-/3-Channel

文件:395.77 Kbytes Page:44 Pages

AD

亚德诺

3 V/5 V, 1 mW, 2-/3-Channel, 16-Bit, Sigma-Delta ADCs

文件:401.94 Kbytes Page:44 Pages

AD

亚德诺

IRF7706产品属性

  • 类型

    描述

  • 型号

    IRF7706

  • 功能描述

    MOSFET P-CH 30V 7A 8-TSSOP

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-9-30 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
16+
TSSOP-8
3513
IR
25+
PLCC-32
18000
原厂直接发货进口原装
IOR
25+23+
TSSOP8
30099
绝对原装正品全新进口深圳现货
IR
24+
TSSOP8
39197
郑重承诺只做原装进口现货
IR
17+
MSOP8
6200
100%原装正品现货
IR
22+
TSSOP8
12245
现货,原厂原装假一罚十!
IR
25+
TSSOP-8
860000
明嘉莱只做原装正品现货
IR
23+
TSSOP8
20000
原装正品,假一罚十
IR
18+
TSOP8
85600
保证进口原装可开17%增值税发票
Infineon Technologies
23+
8TSSOP
9000
原装正品,支持实单

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