位置：首页 > IC中文资料第8543页 > IRF7702TR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF7702TR | Ultra Low On-Resistance Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr | IRF |   | |
Ultra Low On-Resistance Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr | IRF | | ||
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IRF7702TR产品属性
- 类型
描述
- 型号
IRF7702TR
- 功能描述
MOSFET P-CH 12V 8A 8-TSSOP
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
VBSEMI/台湾微碧 |
23+ |
TSSOP8 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon Technologies |
22+ |
8TSSOP |
9000 |
原厂渠道,现货配单 |
|||
IR |
23+ |
MSOP8 |
16651 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
23+ |
TSSOP8 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
20+ |
TSSOP8 |
2960 |
诚信交易大量库存现货 |
|||
IR |
05+ |
原厂原装 |
50051 |
只做全新原装真实现货供应 |
|||
IR |
1709+ |
TSSOP-8 |
45000 |
普通 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
Infineon Technologies |
21+ |
8-TSSOP |
4000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
IRF7702TR芯片相关品牌
IRF7702TR规格书下载地址
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DdatasheetPDF页码索引
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