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IRF750价格
参考价格：￥1.3797
型号：IRF7501TRPBF 品牌：International 备注：这里有IRF750多少钱，2025年最近7天走势，今日出价，今日竞价，IRF750批发/采购报价，IRF750行情走势销售排行榜，IRF750报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PowerMOSFET(Vdss=20V,Rds(on)=0.135ohm) VDSS=20V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowe | IRF International Rectifier |  |   | |
GenerationVTechnologyUlrtraLowOn-Resistance VDSS=20V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowe | IRF International Rectifier | | | |
PowerMOSFET(Vdss=30V,Rds(on)=0.135ohm) VDSS=30V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow | IRF International Rectifier | | | |
HEXFET짰PowerMOSFET VDSS=30V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow | IRF International Rectifier | | | |
GenerationVTechnology VDSS=30V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow | IRF International Rectifier | | | |
PowerMOSFET(Vdss=-20V,Rds(on)=0.27ohm) VDSS=-20V RDS(on)=0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow | IRF International Rectifier | | | |
HEXFETPowerMOSFET VDSS=-20V RDS(on)=0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow | IRF International Rectifier | | | |
HEXFETPowerMOSFET(VDSS=-30V,RDS(on)=O.27ohm) VDSS=-30V RDS(on)=0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow | IRF International Rectifier | | | |
PowerMOSFET(Vdss=-30V,Rds(on)=0.27ohm) VDSS=-30V RDS(on)=0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow | IRF International Rectifier | | | |
HEXFETPowerMOSFET(VDSS=-30V,RDS(on)=O.27ohm) VDSS=-30V RDS(on)=0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow | IRF International Rectifier | | | |
PowerMOSFET(Vdss=-20V) N-ChP-Ch VDSS20V-20V RDS(on)0.135Ω0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefast | IRF International Rectifier | | | |
HEXFET짰PowerMOSFET N-ChP-Ch VDSS20V-20V RDS(on)0.135Ω0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefast | IRF International Rectifier | | | |
PowerMOSFET(Vdss=-30V) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | | | |
30VNP-ChannelEnhancementModeMOSFET Description TheIRF7509usesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeaturesVDS=30VID=6A RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 |  | | |
PowerMOSFET(Vdss=-30V) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | | | |
AdvancedPowerMOSFET BVDSS=400V RDS(on)=0.3Ω ID=15A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=400V ♦LowRDS(ON):0.254Ω | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
UlrtraLowOn-Resistance 文件：184.07 Kbytes Page：9 Pages | IRF International Rectifier | | | |
UlrtraLowOn-Resistance 文件：184.07 Kbytes Page：9 Pages | IRF International Rectifier | | | |
GenerationVTechnology 文件：184.07 Kbytes Page：9 Pages | IRF International Rectifier | | | |
ULTRALOWONRESISTANCE 文件：1.01427 Mbytes Page：8 Pages | IRF International Rectifier | | | |
ULTRALOWONRESISTANCE 文件：1.01427 Mbytes Page：8 Pages | IRF International Rectifier | | | |
ULTRALOWONRESISTANCE 文件：1.08558 Mbytes Page：8 Pages | IRF International Rectifier | | | |
ULTRALOWONRESISTANCE 文件：1.08558 Mbytes Page：8 Pages | IRF International Rectifier | | | |
GenerationVTechnology 文件：1.08558 Mbytes Page：8 Pages | IRF International Rectifier | | | |
ULTRALOWONRESISTANCE 文件：215.79 Kbytes Page：8 Pages | IRF International Rectifier | | | |
ULTRALOWONRESISTANCE 文件：215.79 Kbytes Page：8 Pages | IRF International Rectifier | | | |
GenerationVTechnology 文件：215.79 Kbytes Page：8 Pages | IRF International Rectifier | | | |
UltraLowOn-Resistance 文件：219.56 Kbytes Page：8 Pages | IRF International Rectifier | | | |
GenerationVTechnology 文件：219.56 Kbytes Page：8 Pages | IRF International Rectifier | | | |
UltraLowOn-Resistance 文件：219.56 Kbytes Page：8 Pages | IRF International Rectifier | | | |
GenerationVTechnology 文件：219.56 Kbytes Page：8 Pages | IRF International Rectifier | | | |
GenerationVTechnology 文件：247.27 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
GenerationVTechnology 文件：247.27 Kbytes Page：8 Pages | IRF International Rectifier | | | |
UltraLowOn-Resistance 文件：247.27 Kbytes Page：8 Pages | IRF International Rectifier | | | |
HEXFET짰PowerMOSFET 文件：241.74 Kbytes Page：8 Pages | IRF International Rectifier | | | |
UltraLowOn-Resistance 文件：247.27 Kbytes Page：8 Pages | IRF International Rectifier | | | |
Industry-standardpinoutMicro-8Package 文件：243.22 Kbytes Page：8 Pages | IRF International Rectifier | | | |
Industry-standardpinoutMicro-8Package 文件：243.22 Kbytes Page：8 Pages | IRF International Rectifier | | | |
GenerationVTechnology 文件：247.27 Kbytes Page：8 Pages | IRF International Rectifier | | | |
iscN-ChannelMOSFETTransistor 文件：280.4 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
QUADRATUREHYBRID 文件：154.02 Kbytes Page：1 Pages | APITECH API Technologies Corp |  | | |
QUADRATUREHYBRID 文件：154.01 Kbytes Page：1 Pages | APITECH API Technologies Corp | | | |
OctaveBandandBroadband 文件：291.44 Kbytes Page：5 Pages | APITECH API Technologies Corp | | | |
DirectionalCouplers 文件：291.44 Kbytes Page：5 Pages | APITECH API Technologies Corp | | | |
QUADRATUREHYBRID 文件：154 Kbytes Page：1 Pages | APITECH API Technologies Corp | | |
IRF750产品属性
- 类型
描述
- 型号
IRF750
- 制造商
International Rectifier
- 功能描述
MOSFET DUAL NN MICRO-8
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR(国际整流器) |
24+ |
N/A |
9548 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
INFINEON/英飞凌 |
22+ |
N/A |
16000 |
现货,原厂原装假一罚十! |
|||
IR |
23+ |
SOP-8 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
25+ |
MSOP8 |
54658 |
百分百原装现货 实单必成 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
24+ |
MSOP8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Infineon |
20+ |
原装 |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
23+ |
SOP-8 |
22000 |
原装现货假一罚十 |
|||
INFINEON/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
IOR |
20+ |
MSOP-8 |
2960 |
诚信交易大量库存现货 |
IRF750芯片相关品牌
IRF750规格书下载地址
IRF750参数引脚图相关
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- IRF7478TRPBF/BKN
- IRF7478TRPBF
- IRF7478PBF
- IRF7478
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- IRF7476TRPBF
- IRF7476PBF
- IRF7476
- IRF7475TRPBF
- IRF7475
- IRF7474
- IRF7473TRPBF
- IRF7473PBF
- IRF7473.PBF
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- IRF7471
- IRF7470TRPBF-CUTTAPE
- IRF7470TRPBF
- IRF7470
- IRF7469
- IRF7468
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- IRF7466
IRF750数据表相关新闻
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DdatasheetPDF页码索引
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