Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)

VDSS = 30V RDS(on) = 0.135Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

30V 双 N 通道 HEXFET Power MOSFET, 采用 Micro 8封装

HEXFET짰 Power MOSFET

VDSS = 30V RDS(on) = 0.135Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

Generation V Technology

VDSS = 30V RDS(on) = 0.135Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

ULTRA LOW ON RESISTANCE

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ULTRA LOW ON RESISTANCE

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4 / 8 Channel Analog Multiplexers

GENERAL DESCRIPTION The AD7501 and AD7503 are monolithic CMOS, 8-channel analog multiplexers which switch one of eight inputs to a common output, depending on the state of three binary address lines and an “enable” input. The AD7503 is identical to the AD7501 except its “enable” logic is inverted

CMOS 4/8 Channel Analog Multiplexers

GENERAL DESCRIPTION The AD7501 and AD7503 are monolithic CMOS, 8-channel analog multiplexers which switch one of eight inputs to a common output, depending on the state of three binary address lines and an “enable” input. The AD7503 is identical to the AD7501 except its “enable” logic is inverted

3M??Reusable Respirators

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second generation highly-integrated digital music system solutions

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CMOS 4-/8-Channel Analog Multiplexers

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