Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm)

VDSS = -20V RDS(on) = 0.27Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

-20V 双 P 通道 HEXFET Power MOSFET, 采用 Micro 8封装

HEXFET Power MOSFET

VDSS = -20V RDS(on) = 0.27Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

ULTRA LOW ON RESISTANCE

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ULTRA LOW ON RESISTANCE

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Generation V Technology

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SINGLE PHASE BRIDGE MODULES

Single Phase Bridge Modules ● Internal Transient Supression ● High Terminal-to-base Isolation of 2500VAC RMS ● Available to 1200V ● Mounting Bolts Isolation From Power Teminals

DUAL POSITIVE AND NEGATIVE FIXED VOLTAGE REGULATORS

[Omnirel] DESCRIPTION This series of products offers a positive and a negative fixed voltage regulator in one hermetically sealed, 5 PIN package whose outline is similar to the industry standard TO-247 package. With heat sinking, they can regulate over 1.5 Amp of output current per device. Stand

PIN DIODE

DESCRIPTION The UM7500 series features Microsemi’s innovative passivated chip design which takes advantage of the latest silicon wafer bonding and junction passivation techniques. This new series of PIN diodes incorporates all of the desirable RF properties of previous Microsemi diodes plus extre

Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types

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