Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm)

VDSS = -20V RDS(on) = 0.27Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

-20V 双 P 通道 HEXFET Power MOSFET, 采用 Micro 8封装

HEXFET Power MOSFET

VDSS = -20V RDS(on) = 0.27Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

ULTRA LOW ON RESISTANCE

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ULTRA LOW ON RESISTANCE

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Generation V Technology

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Mounting brackets

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Common Mode Inductors/EMI Filters

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Pre-amp. and power amp. IC for 1.5 V headphone stereo

文件：228.6 Kbytes Page：13 Pages

1.5MHz, 1.5A Synchronous Buck Regulator

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75 AMP PRESS FIT HIGH VOLTAGE DIODES

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