N-Channel Power MOSFETs, 10A, 350V/400V

isc N-Channel Mosfet Transistor

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N-Channel Power MOSFETs

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丝印代码：IRF7424；P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

丝印代码：IRF7424；P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

丝印代码：IRF7424；P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

HEXFET Power MOSFET

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

HEXFET Power MOSFET

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

-12V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 工业标准引出线 SO-8 封装\n• 与现有表面封装技术兼容\n• 符合 RoHS ， 无卤素\n• 符合MSL1，工业认证;

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

Ultra Low On-Resistance

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications •

HEXFET Power MOSFET

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

Ultra Low On-Resistance

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

Ultra Low On-Resistance

Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1,Consumer qualification Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliabili

HEXFET Power MOSFET

Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1,Consumer qualification Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliabili

HEXFET® Power MOSFET

These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications T

Ultra Low On-Resistance

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

Ultra Low On-Resistance

Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1,Consumer qualification Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliabili

Ultra Low On-Resistance

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Ultra Low On-Resistance

文件：159.41 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

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Industry-standard pinout SO-8 Package

文件：196.18 Kbytes Page：9 Pages

MOSFET / Schottky Diode

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MOSFET & Schottky Diode

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MOSFET / Schottky Diode

MOSFET / Schottky Diode

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FETKY MOSFET / Schottky Diode

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FETKY-TM MOSFET AND Schottky Diode

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FETKY-TM MOSFET AND Schottky Diode

FETKY?줞OSFET &Schottky Diode

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封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：MOSFET N-CH 30V 8-SOIC 分立半导体产品 晶体管 - FET，MOSFET - 单个

Ultra Low On-Resistance

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Ultra Low On-Resistance

文件：127.79 Kbytes Page：9 Pages

HEXFET Power MOSFET

文件：122.19 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：127.79 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：235.24 Kbytes Page：9 Pages

HEXFET

Power MOSFET

文件：127.79 Kbytes Page：9 Pages

P-Channel 30-V (D-S) MOSFET

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Industry-standard pinout SO-8 Package

文件：198.01 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：198.01 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：188.2 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：188.2 Kbytes Page：9 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.03753 Mbytes Page：9 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：MOSFET N-CH 20V 8SO 分立半导体产品 晶体管 - FET，MOSFET - 单个

CMOS Low Voltage 2ohm SPST Switches in SC70 Packages

GENERAL DESCRIPTION The ADG741/ADG742 are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater tha

CMOS Low Voltage 2ohm SPST Switches in SC70 Packages

GENERAL DESCRIPTION The ADG741/ADG742 are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater tha

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process.

Integrated Circuit TV Sound Channel, 2W

Description: The NTE742 is designed for use as the entire sound function in television receivers or FM table radios. The NTE742 sound channel will directly drive a 16 ohm speaker with more than 2 watts output. This monolithic integrated circuit will operate from a single 18V to 28V power supply a

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re