IRF742价格

参考价格:¥2.3093

型号:IRF7420PBF 品牌:IR 备注:这里有IRF742多少钱,2026年最近7天走势,今日出价,今日竞价,IRF742批发/采购报价,IRF742行情走势销售排行榜,IRF742报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF742

N-Channel Power MOSFETs, 10A, 350V/400V

Fairchild

仙童半导体

IRF742

N-Channel Power MOSFETs

文件:345.62 Kbytes Page:5 Pages

ARTSCHIP

IRF742

isc N-Channel Mosfet Transistor

文件:65.209 Kbytes Page:2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

IRF

HEXFET Power MOSFET

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

IRF

Ultra Low On-Resistance

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. •

IRF

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

UMW

友台半导体

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

EVVOSEMI

翊欧

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

EVVOSEMI

翊欧

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

UMW

友台半导体

HEXFET Power MOSFET

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

IRF

Ultra Low On-Resistance

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

IRF

HEXFET Power MOSFET

Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1,Consumer qualification Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliabili

IRF

Ultra Low On-Resistance

Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1,Consumer qualification Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliabili

IRF

HEXFET® Power MOSFET

These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. T

SYC

Ultra Low On-Resistance

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

IRF

Ultra Low On-Resistance

Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1,Consumer qualification Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliabili

IRF

Ultra Low On-Resistance

文件:159.41 Kbytes Page:9 Pages

IRF

Ultra Low On-Resistance

文件:159.41 Kbytes Page:9 Pages

IRF

Industry-standard pinout SO-8 Package

文件:196.18 Kbytes Page:9 Pages

IRF

-12V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Infineon

英飞凌

Industry-standard pinout SO-8 Package

文件:196.18 Kbytes Page:9 Pages

IRF

MOSFET / Schottky Diode

文件:178.25 Kbytes Page:8 Pages

IRF

MOSFET & Schottky Diode

文件:119.37 Kbytes Page:8 Pages

IRF

MOSFET / Schottky Diode

Infineon

英飞凌

MOSFET / Schottky Diode

文件:178.25 Kbytes Page:8 Pages

IRF

FETKY MOSFET / Schottky Diode

文件:226.15 Kbytes Page:8 Pages

IRF

FETKY-TM MOSFET AND Schottky Diode

文件:127.97 Kbytes Page:8 Pages

IRF

FETKY-TM MOSFET AND Schottky Diode

Infineon

英飞凌

FETKY?줞OSFET &Schottky Diode

文件:375.24 Kbytes Page:8 Pages

IRF

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:卷带(TR) 描述:MOSFET N-CH 30V 8-SOIC 分立半导体产品 晶体管 - FET,MOSFET - 单个

Infineon

英飞凌

Ultra Low On-Resistance

文件:205.1 Kbytes Page:9 Pages

IRF

HEXFET Power MOSFET

文件:122.19 Kbytes Page:9 Pages

IRF

Ultra Low On-Resistance

文件:127.79 Kbytes Page:9 Pages

IRF

Ultra Low On-Resistance

文件:127.79 Kbytes Page:9 Pages

IRF

Ultra Low On-Resistance

文件:235.24 Kbytes Page:9 Pages

IRF

P-Channel 30-V (D-S) MOSFET

文件:1.04264 Mbytes Page:9 Pages

VBSEMI

微碧半导体

HEXFETPower MOSFET

文件:127.79 Kbytes Page:9 Pages

IRF

Industry-standard pinout SO-8 Package

文件:198.01 Kbytes Page:9 Pages

IRF

Industry-standard pinout SO-8 Package

文件:198.01 Kbytes Page:9 Pages

IRF

Industry-standard pinout SO-8 Package

文件:188.2 Kbytes Page:9 Pages

IRF

Industry-standard pinout SO-8 Package

文件:188.2 Kbytes Page:9 Pages

IRF

P-Channel 30-V (D-S) MOSFET

文件:1.03753 Mbytes Page:9 Pages

VBSEMI

微碧半导体

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:卷带(TR) 描述:MOSFET N-CH 20V 8SO 分立半导体产品 晶体管 - FET,MOSFET - 单个

Infineon

英飞凌

GROMMETS , BUSHINGS

文件:362.45 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Wiha Quality Tools Toll Free: (800) 494-6104

文件:470.28 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Low maintenance Low power consumption Low Life

文件:1.4046 Mbytes Page:3 Pages

MARL

Dura Torsion Insert and Power Bits

文件:346.48 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TIME CLOCK CONTROL WITH FULLY PROGRAMMABLE CYCLE TIMES AND SALT AMOUNT

文件:232.15 Kbytes Page:2 Pages

PENTAIR

滨特尔

IRF742产品属性

  • 类型

    描述

  • 型号

    IRF742

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2026-1-1 17:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
SOP-8
22000
原装现货假一罚十
IR
24+
SOP8
160834
明嘉莱只做原装正品现货
IR(国际整流器)
24+
N/A
10048
原厂可订货,技术支持,直接渠道。可签保供合同
IR
25+23+
SOP8
13397
绝对原装正品全新进口深圳现货
INFINEON/英飞凌
22+
SOP8
40000
A3-7货柜原装正品支持实单
IR
25+
SOP8
6000
全新原装现货、诚信经营!
IR
24+
SOP-8
7910
保证进口原装现货假一赔十
IR
2025+
SMD
2500
原装进口价格优 请找坤融电子!
Infineon(英飞凌)
24+
SOP-8
7860
支持大陆交货,美金交易。原装现货库存。
IR/INFINEON
24+
SOP-8
5715
只做原装 有挂有货 假一罚十

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