Ultra Low On-Resistance

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. •

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

-30V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

Ultra Low On-Resistance

文件：205.1 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：127.79 Kbytes Page：9 Pages

HEXFET Power MOSFET

文件：122.19 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：127.79 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：235.24 Kbytes Page：9 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.04264 Mbytes Page：9 Pages

HEXFET

Power MOSFET

文件：127.79 Kbytes Page：9 Pages

MachFlex™, 41G C #16 Str BC, PVC-NYL Ins, TPE Jkt, 1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 4+1G Conductor 16AWG (26x30) Bare Copper, PVC-NYL Insulation, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

30V N-Channel MOSFET

General Description The AON7424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS 30V ID (at VGS=

Wi-Fi/ISM Bandpass Filter

文件：159.02 Kbytes Page：2 Pages

Wi-Fi/ISM Bandpass Filter (2401 ??2482 MHz)

文件：159.02 Kbytes Page：2 Pages

N-Channel 20-V (D-S) MOSFET

文件：348.16 Kbytes Page：5 Pages