Ultra Low On-Resistance

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

Ultra Low On-Resistance

Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1,Consumer qualification Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliabili

P-Channel 30-V (D-S) MOSFET

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MachFlex™, 61G C #16 Str BC, PVC-NYL Ins, TPE Jkt, 1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 6+1G Conductor 16AWG (26x30) Bare Copper, PVC-NYL Insulation, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

DC-DC CONVERTER BUCK (STEP-DOWN) 40V, 2.5A, 500kHz SYNCHRONOUS

FEATURES  Up to 40 V Input Surge Voltage  Con tinuous O perating Input Voltage up to 36 V  Up to 2.5 A Output Current  500 kHz Switching Frequency  Up to 96 Efficiency  Stable with Low ESR Ceramic Output Capacitors  Resistor Programmable High Side MOS FET Peak Current Limit from 1

Dual 4-Input NOR Gate (with Strobe)

文件：93.9 Kbytes Page：2 Pages

ML (AZ7) Limit Switch

文件：698.07 Kbytes Page：20 Pages

Dual 4-Input NOR Gate (with Strobe)

文件：93.9 Kbytes Page：2 Pages