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IRF740价格
参考价格：￥19.2827
型号：IRF740 品牌：Vishay 备注：这里有IRF740多少钱，2024年最近7天走势，今日出价，今日竞价，IRF740批发/采购报价，IRF740行情走势销售排行榜，IRF740报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF740 | 400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
IRF740 | N-ChannelPowerMOSFETs,10A,350V/400V
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
IRF740 | N-CHANNEL400V-0.48ohm-10A-TO-220PowerMESH]MOSFET ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. 1.HIGHCURRENTSWITCHING 2.UNINTERRUPTIBLEPOWERSUPPLY(U | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
IRF740 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技 |  | |
IRF740 | POWERMOSFET GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic | SUNTACSuntac Electronic Corp. Suntac Electronic Corp. |  | |
IRF740 | TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycapabilityis | DCCOMDc Components 直流元件直流元件有限公司 |  | |
IRF740 | 10A,400V,0.550Ohm,N-ChannelPowerMOSFET 10A,400V,0.550Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsar | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | |
IRF740 | 10A400VNCHANNELPOWERMOSFET GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic | FCI Amphenol ICC |  | |
IRF740 | N-ChannelPowerMOSFET DESCRIPTION TheNellIRF740areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Theyaredesignedasanextremelyefficientandreliabledevice | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 |  | |
IRF740 | iscN-ChannelMOSFETTransistor •DESCRITION •Switchmodepowersupply •Uninterruptablepowersupply •Highspeedpowerswitching •FEATURES •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max) •FastSwitchingSpeed •MinimumLot-to-Lotvariationsforrobustdev | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRF740 | N-ChannelMOSFETTransistor DESCRIPTION •DrainCurrent-ID=10A@TC=25°C •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max) •FastSwitchingSpeed APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersup | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
IRF740 | PowerMOSFET 文件：276.83 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
IRF740 | N-ChannelPowerMOSFETs 文件：345.62 Kbytes Page：5 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. |  | |
IRF740 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | |
IRF740 | PowerMOSFET 文件：157.74 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | |
N-ChannelMOSFET CompatiblewithExistingSurfaceMountTechniques RoHSCompliant,Halogen-Free Features VDS(V)=20V RDS(ON)22m(VGS=4.5V) | UMWUMW 友台友台半导体 |  | | |
ThermoelectricCoolerController GENERALDESCRIPTION TheADN8830isamonolithiccontrollerthatdrivesathermoelectriccooler(TEC)tostabilizethetemperatureofalaserdiodeorapassivecomponentusedintelecommunicationsequipment. Thisdevicereliesonanegativetemperaturecoefficient(NTC)thermistortosenset | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | | |
ThermoelectricCoolerController GENERALDESCRIPTION TheADN8830isamonolithiccontrollerthatdrivesathermoelectriccooler(TEC)tostabilizethetemperatureofalaserdiodeorapassivecomponentusedintelecommunicationsequipment. Thisdevicereliesonanegativetemperaturecoefficient(NTC)thermistortosenset | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
PowerMOSFET(Vdss=20V,Rds(on)=0.022ohm) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | | |
HEXFET짰PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFET CompatiblewithExistingSurfaceMountTechniques RoHSCompliant,Halogen-Free Features VDS(V)=20V RDS(ON)22m(VGS=4.5V) | UMWUMW 友台友台半导体 | | | |
GenerationVTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET짰PowerMOSFET Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
GenerationVTechnology Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
GenerationVTechnology Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
GenerationVTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
GenerationVTechology GenerationVTechology UltraLowOn-ResistanceNChannelMosfet SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free Features Description TheSOP-8hasbeenmodifiedthrouahacustomizedleadframe forenhancedthermalcharacteristicsandmultiple-diecapability makingitidealin | UMWUMW 友台友台半导体 | | | |
GenerationVTechology GenerationVTechology UltraLowOn-ResistanceNChannelMosfet SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free Features Description TheSOP-8hasbeenmodifiedthrouahacustomizedleadframe forenhancedthermalcharacteristicsandmultiple-diecapability makingitidealin | UMWUMW 友台友台半导体 | | | |
GenerationVTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
P-ChannelMOSFET Features ®VDs(VE-55V ®Rps(ON) | UMWUMW 友台友台半导体 | | | |
ThermoelectricCoolerController GENERALDESCRIPTION TheADN8830isamonolithiccontrollerthatdrivesathermoelectriccooler(TEC)tostabilizethetemperatureofalaserdiodeorapassivecomponentusedintelecommunicationsequipment. Thisdevicereliesonanegativetemperaturecoefficient(NTC)thermistortosenset | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
ThermoelectricCoolerController GENERALDESCRIPTION TheADN8830isamonolithiccontrollerthatdrivesathermoelectriccooler(TEC)tostabilizethetemperatureofalaserdiodeorapassivecomponentusedintelecommunicationsequipment. Thisdevicereliesonanegativetemperaturecoefficient(NTC)thermistortosenset | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
HEXFETPowerMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFETPowerMOSFET(VDSS=-20V,RDS(on)=0.040廓) Description TheseHEXFET®PowerMOSFETsinpackageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalanch | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
P-ChannelMOSFET Features ®VDs(VE-55V ®Rps(ON) | UMWUMW 友台友台半导体 | | | |
P-Channel30V(D-S)MOSFET Description TheSOP-8hasbeenmodifiedthroughacustomizedleadframe forenhancedthermacharacteristicsandmultiple-diecapability makingitidealinavarietyofpowerapplications.Withthese improvementsmultipledevicescanbeusedinanapplication withdramaticallyreducedboards | UMWUMW 友台友台半导体 | | | |
HEXFETPOWERMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET짰PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
P-Channel30V(D-S)MOSFET Description TheSOP-8hasbeenmodifiedthroughacustomizedleadframe forenhancedthermacharacteristicsandmultiple-diecapability makingitidealinavarietyofpowerapplications.Withthese improvementsmultipledevicescanbeusedinanapplication withdramaticallyreducedboards | UMWUMW 友台友台半导体 | | | |
HEXFETPowerMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SwitchModePower | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 | | | |
SwitchModePowerSupply(SMPS) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET FEATURES •LowgatechargeQgresultsincimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 | | | |
SMPSMOSFET SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SwitchModePower | VishayVishay Siliconix 威世科技 | | | |
SwitchModePowerSupply(SMPS) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •LowgatechargeQgresultsincimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •LowgatechargeQgresultsincimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww | VishayVishay Siliconix 威世科技 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverte | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SMPSMOSFET Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowerswitching Lead-Free Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandC | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 | | |
IRF740产品属性
- 类型
描述
- 型号
IRF740
- 功能描述
MOSFET N-Chan 400V 10 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
572 |
公司优势库存 热卖中!! |
|||||
isc |
2024 |
TO-220F |
10000 |
国产品牌isc,可替代原装 |
|||
Infineon Technologies |
23+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
Infineon Technologies |
22+ |
2449 |
全新原装深圳现货 |
||||
IR |
22+ |
SOP |
7992 |
诚信经营 |
|||
IR |
07+ |
TO-263 |
1 |
||||
Infineon/英飞凌 |
21+ |
SOIC-8_150mil |
8800 |
公司只作原装正品 |
|||
VISHAY |
23+ |
NA |
5000 |
全新、原装 |
|||
INFINEON |
21+ |
SOP-8 |
3500 |
原装现货 低价清仓 实单可谈 |
|||
INFINEON/英飞凌 |
23+ |
TO-263 |
89630 |
当天发货全新原装现货 |
IRF740芯片相关品牌
IRF740规格书下载地址
IRF740参数引脚图相关
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- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRF7450
- IRF744
- IRF7433
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- IRF740S
- IRF740BPBF
- IRF740B
- IRF740ASTRLPBF
- IRF740ASPBF
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- IRF740ALPBF
- IRF740A
- IRF7406TRPBF-CUTTAPE
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- IRF7406PBF
- IRF7406GTRPBF
- IRF7406
- IRF7404TRPBF-CUTTAPE
- IRF7404TRPBF
- IRF7404PBF
- IRF7404
- IRF7403TRPBF-CUTTAPE
- IRF7403TRPBF
- IRF7403PBF
- IRF7403
- IRF7402TRPBF
- IRF7402PBF
- IRF7402
- IRF7401TRPBF
- IRF7401PBF
- IRF7401
- IRF7389TRPBF
- IRF7389PBF
- IRF7389
- IRF7380TRPBF-CUTTAPE
- IRF7380TRPBF
- IRF7380PBF
- IRF7380
- IRF7379TRPBF
- IRF7379
- IRF7353D2TR
- IRF7351TRPBF
- IRF7351PBF
- IRF7350
- IRF7343TRPBF-CUTTAPE
- IRF7343TRPBF
- IRF7343PBF
- IRF7343
- IRF7342TRPBF/BKN
- IRF7342TRPBF
- IRF7342PBF
- IRF7342D2PBF
- IRF7342
- IRF7341TRPBF-CUTTAPE
- IRF7341TRPBF
- IRF7341PBF
- IRF7341
- IRF734
- IRF7338TRPBF
- IRF7338
- IRF7331
- IRF733
- IRF7329
- IRF7328
- IRF7325
- IRF7324
- IRF732
- IRF7319
- IRF7317
- IRF7316
- IRF7314
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瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-5-7IRF7350TRPBF公司大量原装现货/长期供应
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-5-7
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