HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced therma characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board s

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced therma characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board spa

采用 SO-8 封装的 -30V 单 P 通道 HEXFET 功率 MOSFET

HEXFET짰Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced therma characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board spa

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced therma characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board s

Ultra Low On-Resistance

文件：268.39 Kbytes Page：9 Pages

Generation V Technology

文件：215.79 Kbytes Page：8 Pages

ULTAR LOW ON RESISTANCE

文件：240.98 Kbytes Page：9 Pages

Generation V Technology

文件：240.98 Kbytes Page：9 Pages

ULTAR LOW ON RESISTANCE

文件：240.98 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：237.17 Kbytes Page：10 Pages

-30V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Industry-standard pinout SO-8 Package

文件：237.17 Kbytes Page：10 Pages

Generation V Technology

文件：240.98 Kbytes Page：9 Pages

Hex Inverted Buffers with Open-Collector Outputs

Hex Inverted Buffers with Open-Collector Outputs This device contains hex inverted buffers with open-collector. It performs the Boolean function Y=A in positive Logic. • High Output Voltage (30 V) • High Speed ( tPD = 8.5 ns typical) • Low Power Dissipation (PD = 18 mW per Gate)

HEX INVERTER BUFFERS/DRIVERS WITH OPEN-COLLECTOR HIGH-VOLTAGE OUTPUTS

● Quadrupie 2-Input Positive NAND Gates ● Quadruple 2-Input Positive NAND Gates (with Open Collector Output) (Continue....)

HEX INVERTER BUFFERS/DRIVERS

文件：1.01688 Mbytes Page：17 Pages

Bipolar TTL Logic

文件：295.39 Kbytes Page：4 Pages

Bipolar TTL Logic

文件：434.45 Kbytes Page：4 Pages