IRF740A价格

参考价格:¥19.2827

型号:IRF740A 品牌:Vishay 备注:这里有IRF740A多少钱,2025年最近7天走势,今日出价,今日竞价,IRF740A批发/采购报价,IRF740A行情走势销售排行榜,IRF740A报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF740A

HEXFET Power MOSFET

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch Mode Power Supply ( SMPS ) ● Uninterr

IRF

IRF740A

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power

VishayVishay Siliconix

威世威世科技公司

IRF740A

Power MOSFET

文件:286.48 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRF740A

Power MOSFET

文件:164.33 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRF740A

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

IRF740A

HEXFET Power MOSFET

Infineon

英飞凌

Power MOSFET

FEATURES • Low gate charge Qg results in cimple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod

VishayVishay Siliconix

威世威世科技公司

Switch Mode Power Supply (SMPS)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch Mode Power Supply ( SMPS ) ● Uninterr

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod

VishayVishay Siliconix

威世威世科技公司

SMPS MOSFET

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply ( SMPS )

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod

VishayVishay Siliconix

威世威世科技公司

Switch Mode Power Supply (SMPS)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch Mode Power Supply ( SMPS ) ● Uninterr

IRF

Power MOSFET

FEATURES • Low gate charge Qg results in cimple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in cimple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www

VishayVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converte

ISC

无锡固电

SMPS MOSFET

Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and C

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:286.48 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:164.33 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:238.34 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:164.33 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:164.33 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:238.34 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:238.34 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:238.34 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

740/741 High Displacement Threaded Diaphragm Seal

FEATURES „ Large diaphragm provides ample displacement for inches of water ranges „ Ideal for high static, low differential pressure applications

ASHCROFT

雅斯科

CONTROL B횁SICO Y ECON횙MICO DEL RELOJ FECHADOR ELECTR횙NICO

文件:702.85 Kbytes Page:2 Pages

PENTAIR

滨特尔

10A 400V N-channel Enhancement Mode Power MOSFET

文件:1.67134 Mbytes Page:12 Pages

WXDH

东海半导体

Wiha Quality Tools Slotted Bits

文件:303.45 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

GROMMETS , BUSHINGS

文件:362.45 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF740A产品属性

  • 类型

    描述

  • 型号

    IRF740A

  • 功能描述

    MOSFET N-Chan 400V 10 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-21 11:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO263
10500
保证进口原装现货假一赔十
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
VISHAY/威世
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
IR
15+
TO-220
11560
全新原装,现货库存,长期供应
IR
23+
TO-220
67443
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
23+
TO-220
8000
只做原装现货
FAIRCHILD/仙童
23+
TO-220
50000
全新原装正品现货,支持订货
FAIRCHILD
24+
TO-220
6000
IR
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
ir
05+
TO-220
7800
自己公司全新库存绝对有货

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