Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

4-Bit x 64-word FIFO register; 3-state

GENERAL DESCRIPTION The 74HC/HCT7403 are high-speed Si-gate CMOS devices. They are specified in compliance with JEDEC standard no.7A. FEATURES • Synchronous or asynchronous operation • 3-state outputs • 30 MHz (typical) shift-in and shift-out rates • Readily expandable in word

BASIC SIGNAL PROCESSOR

DESCRIPTION The TDA7403 is a high performance signal processor specifically designed for car radio applications focused on the low-end market. The device includes a complete audioprocessor and a stereo decoder with noiseblanker. Switched-capacitors design technique allows to obtain all these fe

Quad 2-Input NAND Gates with Open-Collector Outputs

General Description This device contains four independent gates each of which performs the logic NAND function. The open-collector outputs require external pull-up resistors for proper logical operation.

7000 Series Miniature Toggle Switches

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N-Channel Enhancement Mode Power MOSFET

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