Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Thermoelectric Cooler Controller

GENERAL DESCRIPTION The ADN8830 is a monolithic controller that drives a thermoelectric cooler (TEC) to stabilize the temperature of a laser diode or a passive component used in telecommunications equipment. This device relies on a negative temperature coefficient (NTC) thermistor to sense t

Thermoelectric Cooler Controller

GENERAL DESCRIPTION The ADN8830 is a monolithic controller that drives a thermoelectric cooler (TEC) to stabilize the temperature of a laser diode or a passive component used in telecommunications equipment. This device relies on a negative temperature coefficient (NTC) thermistor to sense t

N-Channel MOSFET

Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free

Features VDS (V) = 20V RDS(ON) 22 m (VGS = 4.5V)

N-Channel MOSFET

Features Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free VDS (V) = 20V RDS(ON)

20V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

N-Channel MOSFET

Features Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free VDS (V) = 20V RDS(ON)

N-Channel MOSFET

Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free

Features VDS (V) = 20V RDS(ON) 22 m (VGS = 4.5V)

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

ULTRA LOW ON RESISTANCE

文件：202.97 Kbytes Page：9 Pages

ULTRA LOW ON RESISTANCE

文件：202.97 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：241.74 Kbytes Page：9 Pages

20V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Industry-standard pinout SO-8 Package

文件：241.74 Kbytes Page：9 Pages

MachFlex™, 21G C #20 Str BC, PVC Ins, TPE Jkt, PLTC

Product Description MachFlex™ for High Flex, 2+1G Conductor 20AWG (19x32) Bare Copper, PVC Insulation, TPE Outer Jacket, PLTC

Miniature Rocker Lever Handle Switches

文件：1.58957 Mbytes Page：22 Pages

Quad 2-Input NAND Gates with Open-Collector Outputs

文件：97.92 Kbytes Page：4 Pages

7000 Series Miniature Toggle Switches

文件：1.03503 Mbytes Page：14 Pages

P-Channel Enhancement Mode MOSFET

文件：326.69 Kbytes Page：7 Pages