HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040廓 )

Description These HEXFET® Power MOSFETs in package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanch

TRIPLE VOLTAGE REGULATOR

■ ONLY TWO CELL NEED AS INPUT ■ THREE REGULATED OUTPUT 1) HIGH EFFICENCY PFM DC/DC CONVERTER 3.3V AT 200mA (87 EFFICENCY) 2) VERY LOW NOISE AND VERY LOW DROP VREG (3V AT 20mA) 3) VERY LOW NOISE AAND VERY LOW DROP VREG (1.9V AT 20mA) ■ LOGIC CONTROLLED ELECTRONIC SHUTDOWN ■ LOW BA

Package contains six inverters

[MOTOROLA] HEX INVERTER LOW POWER SCHOTTKY

HEX INVERTER

DESCRIPTION The M54/74HC04 is a high speed CMOS HEX INVERTER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA

PCI Express 4-Port RS-232, RS-422, RS-485 Serial Interface

Features • Each port individually configurable for RS-232, RS-422, or RS-485 • Ultra high-speed UART with 256-byte Tx and Rx FIFOs • Supports asynchronous RS-232 data rates to 230.4 Kbps and RS- 422/485 data rates exceeding 1 Mbps • Bus-derived 125 MHz BRG and clock prescalar support wide ran

Common Mode Inductors/EMI Filters

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