isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Low RDS(on) = 0.180Ω(TYP) • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technology

IRF640FP 18A 200V N CHANNEL POWER MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. FEATURES ♦ Silicon Gate for Fast Switching Speeds ♦ Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperat

N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET

DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 0.150 Ω ■ EXTREMELY HIGH dV/dt CAPABILITY ■ VERY LOW

Mosfet

200V N-Channel MOSFET

ROD SEALS

DESCRIPTION The BECA 640 profile is a double acting composite rod seal composed of a rubber O'Ring or square ring and a polyamide friction ring. APPLICATIONS Agriculture Mobile machinery Hydraulic cylinders

MINIATURE FUSEHOLDERS

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Quartz Stability

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3M??Scotch짰 Transparent Film Tape 640

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PULSE TRANSFORMERS

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