DESCRIPTION

This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

■ TYPICAL RDS(on) = 0.150 Ω

■ EXTREMELY HIGH dV/dt CAPABILITY

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

APPLICATIONS

■ HIGH CURRENT SWITCHING

■ UNINTERRUPTIBLE POWER SUPPLY (UPS)

■ DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.