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IRF621价格

参考价格:¥7.2765

型号:IRF6215LPBF 品牌:International 备注:这里有IRF621多少钱,2026年最近7天走势,今日出价,今日竞价,IRF621批发/采购报价,IRF621行情走势销售排行榜,IRF621报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF621

N-Channel Power MOSFETs, 7A, 150-200V

N-Channel Power MOSFETs 7A 150-200V

FAIRCHILD

仙童半导体

IRF621

isc N-Channel MOSFET Transistor

文件:45.07 Kbytes Page:2 Pages

ISC

无锡固电

IRF621

N-Channel Power Mosfets

文件:154.1 Kbytes Page:5 Pages

ARTSCHIP

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29廓 , ID=-13A )

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

IRF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

-150V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

INFINEON

英飞凌

HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29廓 , ID=-13A )

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

IRF

-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package

\n优势:\n• RoHS Compliant\n• Low RDS(on)\n• Industry-leading quality\n• Dynamic dv/dt Rating\n• Fast Switching\n• Fully Avalanche Rated\n• 175°C Operating Temperature\n• P-Channel MOSFET;

INFINEON

英飞凌

P-Ch 150V Fast Switching MOSFETs

Description Advanced TrenchMOSTechnology 100 EAS Guaranteed Green Device Available Applications Load Switch. Power Management. LED Backlighting. Networking application.

EVVOSEMI

翊欧

-150V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 工业标准引出线 SO-8 封装\n• 与现有表面封装技术兼容\n• 符合 RoHS , 无卤素\n• 符合MSL1,工业认证;

INFINEON

英飞凌

HEXFET Power MOSFET(Reset Switch for Active Clamp Reset DC to DC converters)

Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current

IRF

SMPS MOSFET

Applications • Reset Switch for Active Clamp Reset DC to DC converters • Lead-Free Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) • Fully Characterized Avalanche

IRF

SMPS MOSFET HEXFET짰Power MOSFET

Applications • Reset Switch for Active Clamp Reset DC to DC converters • Lead-Free Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) • Fully Characterized Avalanche

IRF

SMPS MOSFET

Applications • Reset Switch for Active Clamp Reset DC to DC converters • Lead-Free Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) • Fully Characterized Avalanche

IRF

SMPS MOSFET HEXFET짰Power MOSFET

Applications • Reset Switch for Active Clamp Reset DC to DC converters • Lead-Free Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) • Fully Characterized Avalanche

IRF

SMPS MOSFET

Applications • Reset Switch for Active Clamp Reset DC-DC converters Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) • Fully Characterized Avalanche Voltage and

IRF

HEXFET Power MOSFET

Applications Reset Switch for Active Clamp Reset DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design Fully Characterized Avalanche Voltage and Current

IRF

HEXFET Power MOSFET

Applications Reset Switch for Active Clamp Reset DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design Fully Characterized Avalanche Voltage and Current

IRF

P-Channel Enhancement Power MOSFET

Application | « Reverse Battery protection | « Load switch « Power management « PWM Application

TECHPUBLIC

台舟电子

Advanced Process Technology

文件:193.79 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:183.02 Kbytes Page:9 Pages

IRF

Advanced Process Technology

文件:998.15 Kbytes Page:11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Advanced Process Technology

文件:193.79 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:193.79 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:998.15 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:193.79 Kbytes Page:11 Pages

IRF

SMPS MOSFET

文件:104.7 Kbytes Page:8 Pages

IRF

Reset Switch for Active Clamp Reset DC-DC converters

文件:129.87 Kbytes Page:8 Pages

IRF

HEXFET Power MOSFET

文件:124.28 Kbytes Page:8 Pages

IRF

SMPS MOSFET

文件:104.7 Kbytes Page:8 Pages

IRF

Reset Switch for Active Clamp Reset DC-DC converters

文件:129.87 Kbytes Page:8 Pages

IRF

Industry-standard pinout SO-8 Package

文件:199.11 Kbytes Page:8 Pages

IRF

HEXFET Power MOSFET

文件:199.11 Kbytes Page:8 Pages

IRF

Reset Switch for Active Clamp Reset DC-DC converters

文件:129.87 Kbytes Page:8 Pages

IRF

Industry-standard pinout SO-8 Package

文件:199.11 Kbytes Page:8 Pages

IRF

Reset Switch for Active Clamp Reset DC to DC converters

文件:130.949 Kbytes Page:8 Pages

IRF

Industry-standard pinout SO-8 Package

文件:200.43 Kbytes Page:8 Pages

IRF

Industry-standard pinout SO-8 Package

文件:200.43 Kbytes Page:8 Pages

IRF

Industry-standard pinout SO-8 Package

文件:200.43 Kbytes Page:8 Pages

IRF

P-Channel MOSFET Transistor

文件:333.52 Kbytes Page:2 Pages

ISC

无锡固电

Reset Switch for Active Clamp Reset DC-DC converters

文件:305.59 Kbytes Page:9 Pages

IRF

HEXFET Power MOSFET

文件:133.13 Kbytes Page:7 Pages

IRF

Reset Switch for Active Clamp Reset DC-DC converters

文件:142.09 Kbytes Page:8 Pages

IRF

丝印代码:D2PAK;isc P-Channel MOSFET Transistor

文件:297.09 Kbytes Page:2 Pages

ISC

无锡固电

HEXFET짰 Power MOSFET

文件:460.11 Kbytes Page:9 Pages

INFINEON

英飞凌

Reset Switch for Active Clamp Reset DC-DC converters

文件:305.59 Kbytes Page:9 Pages

IRF

Low Gate to Drain Charge to Reduce Switching Losses

文件:236.31 Kbytes Page:9 Pages

IRF

Reset Switch for Active Clamp Reset DC-DC converters

文件:305.59 Kbytes Page:9 Pages

IRF

HEXFET짰 Power MOSFET

文件:460.11 Kbytes Page:9 Pages

INFINEON

英飞凌

Silicon Rectifier, General Purpose, High Voltage, Standard Recovery (Surface Mount)

Features: High Temperature Metallurgically Bonded Glass Passivated Junction High Temperature Soldering Guaranteed: +450°C/5 Seconds at Terminals. Complete Device Submersible Temperature of +260°C/10 Seconds in Solder Bath.

NTE

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

PANASONIC

松下

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

PANASONIC

松下

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

PANASONIC

松下

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

PANASONIC

松下

IRF621产品属性

  • 类型

    描述

  • Package :

    TO-220

  • VDS max:

    -150.0V

  • RDS (on)(@10V) max:

    290.0mΩ

  • RDS (on) max:

    290.0mΩ

  • Polarity :

    P

  • ID (@ TC=25°C) max:

    -13.0A

  • ID (@ TC=100°C) max:

    -9.0A

  • ID  max:

    -9.0A

  • Ptot max:

    110.0W

  • QG :

    44.0nC 

  • RthJC max:

    1.4K/W

  • Mounting :

    THT

  • Qgd :

    23.3nC 

  • Tj max:

    175.0°C

  • VGS max:

    20.0V

更新时间:2026-5-20 9:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
SOP8
9860
一级代理/全新现货/长期供应!
INFINEON/英飞凌
2021+
TO-263
9000
原装现货,随时欢迎询价
273
8
IR
10
92
Infineon(英飞凌)
NA
4605
全新原装正品现货可开票
INFINEON/英飞凌
2025+
TO-263
531
原装进口价格优 请找坤融电子!
IR
23+
SO-8
65400
INFINEON
23+
SOP-8
30000
正规渠道,只有原装!
IR
2450+
SOP8
8850
只做原装正品假一赔十为客户做到零风险!!
IR
23+/24+
SOP-8
9865
主推型号,原装正品,终端BOM表可配单,可开13点税
IR
25+
SOP-8
98900
原厂原装正品现货!!

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