HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

-150V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道 MOSFET;

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29廓 , ID=-13A )

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

-150V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29廓 , ID=-13A )

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

Advanced Process Technology

文件：193.79 Kbytes Page：11 Pages

Advanced Process Technology

文件：183.02 Kbytes Page：9 Pages

Advanced Process Technology

文件：998.15 Kbytes Page：11 Pages

Advanced Process Technology

文件：193.79 Kbytes Page：11 Pages

Advanced Process Technology

文件：193.79 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：998.15 Kbytes Page：11 Pages

Advanced Process Technology

文件：193.79 Kbytes Page：11 Pages

AGC IC for telephone speech network

■ Overview The AN6215S is an AGC IC for telephone speech network, and it incorporates an microphone input detection circuit and a receiver gain control circuit. It is especially best suited for cordless telephone thanks to a good speech tone quality obtained by reducing howling and echo sound. ■

8-BIT MCUs WITH A/D CONVERTER, TWO TIMERS, OSCILLATOR SAFEGUARD & SAFE RESET

INTRODUCTION The ST6215C, 25C devices are low cost members of the ST62xx 8-bit HCMOS family of microcontrollers, which is targeted at low to medium complexity applications. All ST62xx devices are based on a building block approach: a common core is surrounded by a number of on-chip peripherals.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For switching/digital circuits ■ Features • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● UN1215 × 2 elements

POW-R-BLOK Dual SCR/Diode Isolated Module 150 Amperes / Up to 1600 Volts

文件：111.61 Kbytes Page：5 Pages