8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and R

PNP SILICON POWER TRANSISTORS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. Features • Switching Regulators • Inverters • Solenoid an

HIGH VOLTAGE PNP POWER TRANSISTOR

■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR ■ HIGH VOLTAGE CAPABILITY APPLICATIONS: ■ SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS DESCRIPTION The MJE5852 is manufactured using High Voltage PNP Multi-Epitaxial technology for high switching speed and high voltage c

HIGH VOLTAGE PNP POWER TRANSISTOR

DESCRIPTION The MJE5852 is manufactured using High Voltage PNP Multi-Epitaxial technology for high switching speed and high voltage capability. It is intended for use in high frequency and efficiency converters, switching regulators and motor control. ■ STMicroelectronics PREFERRED SAL

SWITCHMODE Series PNP Silicon Power Transistors

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and R

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage : VCEO= -400V(Min) · Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching Regulators ·Inverters ·Solenoid and relay drivers ·Motor control

封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP 400V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP 400V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS

文件：104.82 Kbytes Page：8 Pages

HIGH VOLTAGE PNP POWER TRANSISTOR

■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR ■ HIGH VOLTAGE CAPABILITY APPLICATIONS: ■ SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS DESCRIPTION The MJE5852 is manufactured using High Voltage PNP Multi-Epitaxial technology for high switching speed and high voltage c

Switch-mode Series PNP Silicon Power Transistors

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8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS

文件：104.82 Kbytes Page：8 Pages

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 28 (7/36) AWG Silver Plated Copper 0.015 b) Insulation 0.010 Wall, Nom. PTFE 0.035+/- 0.004 (1) Color(s) WHITE, BLACK, RED, GREEN, YELLOW, BLUE, BROWN ORANGE, GRAY, VIOLET, WHITE/BLACK, WHITE/BLUE WHITE/ORANGE, WHITE/VIOLET

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3), facilitating high-density mounting. • [MOS] • Low ON-resistance • Ultrahigh-speed switching • 4V drive • [SBD]

Power MOSFET(Vdss=20V)

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

Customer Specification

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