PNP SILICON POWER TRANSISTORS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. Features • Switching Regulators • Inverters • Solenoid an

8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and R

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage : VCEO= -400V(Min) · Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching Regulators ·Inverters ·Solenoid and relay drivers ·Motor control

SWITCHMODE Series PNP Silicon Power Transistors

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and R

HIGH VOLTAGE PNP POWER TRANSISTOR

■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR ■ HIGH VOLTAGE CAPABILITY APPLICATIONS: ■ SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS DESCRIPTION The MJE5852 is manufactured using High Voltage PNP Multi-Epitaxial technology for high switching speed and high voltage c

HIGH VOLTAGE PNP POWER TRANSISTOR

DESCRIPTION The MJE5852 is manufactured using High Voltage PNP Multi-Epitaxial technology for high switching speed and high voltage capability. It is intended for use in high frequency and efficiency converters, switching regulators and motor control. ■ STMicroelectronics PREFERRED SAL

8.0 A, 400 V PNP Bipolar Power Transistor

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. • Pb-Free Packages are Available;

封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP 400V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP 400V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS

文件：104.82 Kbytes Page：8 Pages

HIGH VOLTAGE PNP POWER TRANSISTOR

■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR ■ HIGH VOLTAGE CAPABILITY APPLICATIONS: ■ SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS DESCRIPTION The MJE5852 is manufactured using High Voltage PNP Multi-Epitaxial technology for high switching speed and high voltage c

8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS

文件：104.82 Kbytes Page：8 Pages

Switch-mode Series PNP Silicon Power Transistors

文件：104.24 Kbytes Page：8 Pages

Digital Signal Processor

Digital Signal Processor

Dynamic Range Compression LSI

OVERVIEW The SM5852CS is a digital signal processor IC that performs dynamic range compression for use in digital audio reproduction equipment. It is designed for use with a 44.1 kHz sampling frequency. FEATURES ■ 2-channel processing ■ 6 input-level dependent dynamic gain characteristics ■ D

Digital Dynamic Bass Boost LSI

OVERVIEW The SM5852FS is a digital signal processor IC that performs DDBB (digital dynamic bass boost) processing for use in digital audio reproduction equipment. It is designed for use with a 44.1 kHz sampling frequency. FEATURES ■ 2-channel processing ■ Improved DDBB mode channel separation