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IRF5210价格

参考价格:¥6.3602

型号:IRF5210LPBF 品牌:INTERNATIONAL 备注:这里有IRF5210多少钱,2026年最近7天走势,今日出价,今日竞价,IRF5210批发/采购报价,IRF5210行情走势销售排行榜,IRF5210报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF5210

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

IRF5210

-100V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

INFINEON

英飞凌

IRF5210

P-Channel MOSFET Transistor

文件:334.13 Kbytes Page:2 Pages

ISC

无锡固电

IRF5210

Advanced Process Technology

文件:738.7 Kbytes Page:8 Pages

KERSEMI

-100V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-262 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

INFINEON

英飞凌

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET Power MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

IRF

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

P-Ch 100V Fast Switching MOSFETs

100 EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology

EVVOSEMI

翊欧

-100V 单个 P 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

INFINEON

英飞凌

HEXFET Power MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

IRF

丝印代码:F5210S;P-Channel Power MOSFET

Application + DC/DC Converter Portable equipment and battery « Power Switch

TECHPUBLIC

台舟电子

Advanced Process Technology

文件:738.7 Kbytes Page:8 Pages

KERSEMI

isc P-Channel MOSFET Transistor

文件:272.32 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:316.18 Kbytes Page:10 Pages

IRF

HEXFET Power MOSFET

文件:194.51 Kbytes Page:9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:195.47 Kbytes Page:9 Pages

IRF

丝印代码:D2PAK;isc P-Channel MOSFET Transistor

文件:296.67 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:D2PAK;isc P-Channel MOSFET Transistor

文件:318.93 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:316.18 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:316.18 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:316.18 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:207.79 Kbytes Page:11 Pages

IRF

Transimpedance amplifier 280MHz

DESCRIPTION The NE5210 is a 7kΩ transimpedance wide band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber-optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block. FEATURES • Low noise: 3.5pA/√Hz

PHILIPS

飞利浦

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

PANASONIC

松下

HIGH-PERFORMANCE AIGAAS PHOTOTRANSISTOR OPTOCOUPLERS

文件:553.8 Kbytes Page:6 Pages

QT

PROGRAMMABLE SYNCHRONOUS-BUCK REGULATOR CONTROLLER

文件:417.02 Kbytes Page:29 Pages

TI

德州仪器

PROGRAMMABLE SYNCHRONOUS-BUCK REGULATOR CONTROLLER

文件:417.02 Kbytes Page:29 Pages

TI

德州仪器

IRF5210产品属性

  • 类型

    描述

  • OPN:

    IRF5210PBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    -100 V

  • RDS (on) @10V max:

    60 mΩ

  • ID @25°C max:

    -40 A

  • QG typ @10V:

    120 nC

  • Polarity:

    P

  • VGS(th) min:

    -2 V

  • VGS(th) max:

    -4 V

  • VGS(th):

    -3 V

  • Technology:

    IR MOSFET™

更新时间:2026-5-20 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
25+
D2PAK
7589
全新原装现货,支持排单订货,可含税开票
IR
25+
TO-263
9742
保证进口原装现货假一赔十
IR
24+
SOT-263
2000
原装正品,欢迎咨询
IR
26+
TO-220
85530
百分百原装正品现货 假一赔百
INFINEON/英飞凌
25+
TO-220
20300
INFINEON/英飞凌原装特价IRF5210PBF即刻询购立享优惠#长期有货
IR
25+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
INFINEON
22+
D2PAK
19200
原装正品可支持验货,欢迎咨询
INFINEON/英飞凌
22+
TO263AB
8860000
原装正品,欢迎来电咨询
Infineon(英飞凌)
25+
D2PAK
10000
就找我吧!--邀您体验愉快问购元件!

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