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位置：首页 > IC中文资料第402页 > IRF5210

IRF5210价格

参考价格：￥6.3602

型号：IRF5210LPBF 品牌：INTERNATIONAL 备注：这里有IRF5210多少钱，2025年最近7天走势，今日出价，今日竞价，IRF5210批发/采购报价，IRF5210行情走势销售排行榜，IRF5210报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF5210

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

IRF5210

Advanced Process Technology

文件：738.7 Kbytes Page：8 Pages

KERSEMI

IRF5210

P-Channel MOSFET Transistor

文件：334.13 Kbytes Page：2 Pages

ISC

无锡固电

IRF5210L

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF5210LPBF

HEXFET Power MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

IRF

IRF5210PBF.

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

IRF5210S

P-Ch 100V Fast Switching MOSFETs

100 EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology

EVVOSEMI

翊欧

IRF5210S

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF5210SPBF

HEXFET Power MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

IRF

IRF5210STRLPBF

P-Channel Power MOSFET

Application + DC/DC Converter Portable equipment and battery « Power Switch

TECHPUBLIC

台舟电子

IRF5210L

isc P-Channel MOSFET Transistor

文件：272.32 Kbytes Page：2 Pages

ISC

无锡固电

IRF5210L

Advanced Process Technology

文件：738.7 Kbytes Page：8 Pages

KERSEMI

IRF5210LPBF

Advanced Process Technology

文件：316.18 Kbytes Page：10 Pages

IRF

IRF5210PBF

HEXFET Power MOSFET

文件：194.51 Kbytes Page：9 Pages

IRF

IRF5210PBF_15

ADVANCED PROCESS TECHNOLOGY

文件：195.47 Kbytes Page：9 Pages

IRF

IRF5210S

isc P-Channel MOSFET Transistor

文件：296.67 Kbytes Page：2 Pages

ISC

无锡固电

IRF5210SPBF

Advanced Process Technology

文件：316.18 Kbytes Page：10 Pages

IRF

IRF5210SPBF

isc P-Channel MOSFET Transistor

文件：318.93 Kbytes Page：2 Pages

ISC

无锡固电

IRF5210SPBF_15

Advanced Process Technology

文件：316.18 Kbytes Page：10 Pages

IRF

IRF5210STRLPBF

Advanced Process Technology

文件：316.18 Kbytes Page：10 Pages

IRF

IRF5210STRR

Advanced Process Technology

文件：207.79 Kbytes Page：11 Pages

IRF

AD5210

12-Bit Successive Approximation High Acquisition A/D Converter

GENERAL DESCRIPTION The AD5200 and AD5201 are programmable resistor devices, with 256 positions and 33 positions respectively, that can be digitally controlled through a 3-wire SPI serial interface. The terms programmable resistor, variable resistor (VR), and RDAC are commonly used interchangea

AD

亚德诺

5210

A-AA DUAL M/F BATTERY CONTACT

文件：205.31 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

5210

BATTERY CONTACTS FOR MOLDED CASES

文件：457.65 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

5210E

Instrument Knobs

文件：332.46 Kbytes Page：2 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

5210F

Panel Mounted LED Indicator Light

文件：20.05 Kbytes Page：1 Pages

CML

IRF5210产品属性

  • 类型

    描述

  • 型号

    IRF5210

  • 制造商

    International Rectifier

  • 功能描述

    Trans MOSFET P-CH 100V 40A 3-Pin(3+Tab) TO-220AB

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET P TO-220

IRF5210供应商更多...

更新时间：2025-8-13 19:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市联世界科技有限公司
IRF5210PBF
IR
24+/25+
TO-220AB
3200
原装正品现货库存价优
询价
深圳市威雅利发展有限公司
IRF5210STRLPBF
INFINEON
17+
TO-263
4000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
中天科工半导体（深圳）有限公司
IRF5210PBF
INFINEON/英飞凌
25+
TO-220
20300
INFINEON/英飞凌原装特价IRF5210PBF即刻询购立享优惠#长期有货
询价
深圳市弘扬芯城科技有限公司
IRF5210STRLPBF
Infineon(英飞凌)
2024+
TO-263-3
500000
诚信服务,绝对原装原盘
询价
深圳市明嘉莱科技有限公司
IRF5210SPBF
IR
25+
NA
880000
明嘉莱只做原装正品现货
询价
深圳市凌旭科技有限公司
IRF5210STRLPBF
IR
2016+
TO263
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市科恒伟业电子有限公司
IRF5210SPBF
IR
1950+
TO-263
4856
只做原装正品现货!或订货假一赔十!
询价
深圳市润联芯城科技有限公司
IRF5210STRLPBF
INFINEON/英飞凌
22+
TO-263
12500
原装正品支持实单
询价
深圳市科芯源微电子有限公司
IRF5210SPBF
IR
25+
TO263
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市冠亿通科技有限公司
IRF5210STRLPBFMOS(场效应管)
INFINEON/英飞凌
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价

IRF5210芯片相关品牌

IRF5210规格书下载地址

IRF5210参数引脚图相关

IRF5210数据表相关新闻

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