Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

P-Ch 100V Fast Switching MOSFETs

100 EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology

-100V 单个 P 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

isc P-Channel MOSFET Transistor

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HEXFET Power MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

P-Channel Power MOSFET

Application + DC/DC Converter Portable equipment and battery « Power Switch

Advanced Process Technology

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isc P-Channel MOSFET Transistor

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Advanced Process Technology

文件：316.18 Kbytes Page：10 Pages

Advanced Process Technology

文件：316.18 Kbytes Page：10 Pages

Advanced Process Technology

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12-Bit Successive Approximation High Acquisition A/D Converter

GENERAL DESCRIPTION The AD5200 and AD5201 are programmable resistor devices, with 256 positions and 33 positions respectively, that can be digitally controlled through a 3-wire SPI serial interface. The terms programmable resistor, variable resistor (VR), and RDAC are commonly used interchangea

A-AA DUAL M/F BATTERY CONTACT

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BATTERY CONTACTS FOR MOLDED CASES

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Instrument Knobs

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Panel Mounted LED Indicator Light

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