Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

P-Ch 100V Fast Switching MOSFETs

100 EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology

isc P-Channel MOSFET Transistor

文件：296.67 Kbytes Page：2 Pages

HEXFET Power MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

P-Channel Power MOSFET

Application + DC/DC Converter Portable equipment and battery « Power Switch

Advanced Process Technology

文件：316.18 Kbytes Page：10 Pages

isc P-Channel MOSFET Transistor

文件：318.93 Kbytes Page：2 Pages

Advanced Process Technology

文件：316.18 Kbytes Page：10 Pages

Advanced Process Technology

文件：316.18 Kbytes Page：10 Pages

Advanced Process Technology

文件：207.79 Kbytes Page：11 Pages

12-Bit Successive Approximation High Acquisition A/D Converter

GENERAL DESCRIPTION The AD5200 and AD5201 are programmable resistor devices, with 256 positions and 33 positions respectively, that can be digitally controlled through a 3-wire SPI serial interface. The terms programmable resistor, variable resistor (VR), and RDAC are commonly used interchangea

A-AA DUAL M/F BATTERY CONTACT

文件：205.31 Kbytes Page：1 Pages

BATTERY CONTACTS FOR MOLDED CASES

文件：457.65 Kbytes Page：1 Pages

Instrument Knobs

文件：332.46 Kbytes Page：2 Pages

Panel Mounted LED Indicator Light

文件：20.05 Kbytes Page：1 Pages