HEXFET Power MOSFET

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Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

ADVANCED PROCESS TECHNOLOGY

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Transimpedance amplifier 280MHz

DESCRIPTION The NE5210 is a 7kΩ transimpedance wide band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber-optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block. FEATURES • Low noise: 3.5pA/√Hz

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

HIGH-PERFORMANCE AIGAAS PHOTOTRANSISTOR OPTOCOUPLERS

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PROGRAMMABLE SYNCHRONOUS-BUCK REGULATOR CONTROLLER

文件：417.02 Kbytes Page：29 Pages

PROGRAMMABLE SYNCHRONOUS-BUCK REGULATOR CONTROLLER

文件：417.02 Kbytes Page：29 Pages