Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

isc P-Channel MOSFET Transistor

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Advanced Process Technology

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-100V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-262 封装

HEXFET Power MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

Advanced Process Technology

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12-Bit Successive Approximation High Acquisition A/D Converter

GENERAL DESCRIPTION The AD5200 and AD5201 are programmable resistor devices, with 256 positions and 33 positions respectively, that can be digitally controlled through a 3-wire SPI serial interface. The terms programmable resistor, variable resistor (VR), and RDAC are commonly used interchangea

A-AA DUAL M/F BATTERY CONTACT

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BATTERY CONTACTS FOR MOLDED CASES

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Instrument Knobs

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Panel Mounted LED Indicator Light

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