N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low Input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

isc N-Channel MOSFET Transistor

DESCRIPTION • VGS Rated at ±20V • Silicon Gate for Fast Switching Speeds • IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature • Rugged APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor cont

N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

Trans MOSFET N-CH 350V 5.5A 3-Pin (2+Tab) TO-3

采用 TO-220AB 封装的 150V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n ;

N-Channel MOSFET Transistor

• DESCRITION • Combine with the fast switching speed and ruggedized device design • FEATURES • Static drain-source on-resistance: RDS(on) ≤70mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operati

Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Isc N-Channel MOSFET Transistor

• FEATURES • With To-262 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 150V D2PAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

MOSFET N-CH 150V D2PAK

ADVANCED PROCESS TECHNOLOGY

文件：391.31 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：237.5 Kbytes Page：8 Pages

HEXFET Power MOSFET

文件：143.01 Kbytes Page：8 Pages

ADVANCED PROCESS TECHNOLOGY

文件：237.5 Kbytes Page：8 Pages

ADVANCED PROCESS TECHNOLOGY

文件：391.31 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：391.31 Kbytes Page：11 Pages

Precision Voltage-to-Frequency Converters

文件：280 Kbytes Page：16 Pages

Precision Voltage-to-Frequency Converters

文件：368.44 Kbytes Page：15 Pages

Precision Voltage-to-Frequency Converters

文件：280 Kbytes Page：16 Pages

Precision Voltage-to-Frequency Converters

文件：280 Kbytes Page：16 Pages

Precision Voltage-to-Frequency Converters

文件：368.44 Kbytes Page：15 Pages