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晶体管

BD250晶体管资料

BD250别名：BD250三极管、BD250晶体管、BD250晶体三极管
BD250生产厂家：美国得克萨斯仪表公司
BD250制作材料：Si-PNP
BD250性质：低频或音频放大（LF）_功率放大（L）
BD250封装形式：直插封装
BD250极限工作电压：45V
BD250最大电流允许值：25A
BD250最大工作频率：<1MHZ或未知
BD250引脚数：3
BD250最大耗散功率：125W
BD250放大倍数：
BD250图片代号：B-62
BD250vtest：45
BD250htest：999900
BD250atest：25
BD250wtest：125

BD250代换 BD250用什么型号代替：BD258/45,TIP36,3CD15B,

型号	功能描述	生产厂家&企业	LOGO
BD250	POWER TRANSISTORS(25A,125W) COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
BD250	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	POINN Power Innovations Ltd	POINN
BD250	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	Bourns 伯恩斯	Bourns
BD250	Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	SAVANTIC	SAVANTIC
BD250	Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	ISC 无锡固电	ISC
BD250	Silicon NPN Power Transistors 文件：146.37 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
BD250	Silicon NPN Power Transistors 文件：146.38 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
BD250	Silicon PNP Power Transistor 文件：145.24 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
BD2500	25A BOSCH TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2500G	25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2501	25A BOSCH TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2501G	25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2502	25A BOSCH TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2502G	25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2503	25A BOSCH TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2503G	25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2504	25A BOSCH TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2504G	25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2505	25A BOSCH TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2505G	25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2506	25A BOSCH TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2506G	25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD250A	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	POINN Power Innovations Ltd	POINN
BD250A	POWER TRANSISTORS(25A,125W) COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
BD250A	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	Bourns 伯恩斯	Bourns
BD250A	isc Silicon PNP Power Transistor DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	ISC 无锡固电	ISC
BD250A	Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	SAVANTIC	SAVANTIC
BD250B	Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	SAVANTIC	SAVANTIC
BD250B	POWER TRANSISTORS(25A,125W) COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
BD250B	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	Bourns 伯恩斯	Bourns
BD250B	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	POINN Power Innovations Ltd	POINN
BD250B	isc Silicon PNP Power Transistor DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	ISC 无锡固电	ISC
BD250C	isc Silicon PNP Power Transistor DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	ISC 无锡固电	ISC
BD250C	POWER TRANSISTORS(25A,125W) COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
BD250C	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	Bourns 伯恩斯	Bourns
BD250C	Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	SAVANTIC	SAVANTIC
BD250C	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	POINN Power Innovations Ltd	POINN
BD2500	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2500	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2500_06	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2500_14	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2501	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2501	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2502	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2502	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2503	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2503	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2504	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2504	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2505	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2505	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2506	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD2506	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
BD250A	Silicon NPN Power Transistors 文件：146.37 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
BD250A	Silicon PNP Power Transistor 文件：145.24 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
BD250A	Silicon NPN Power Transistors 文件：146.38 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
BD250B	Silicon PNP Power Transistor 文件：145.24 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
BD250B	Silicon NPN Power Transistors 文件：146.38 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
BD250B	Silicon NPN Power Transistors 文件：146.37 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
BD250B-S	封装/外壳：TO-218-3 包装：管件描述：TRANS PNP 80V 25A SOT93 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC

BD250产品属性

类型
描述
型号
BD250
功能描述
两极晶体管 - BJT 120W PNP Silicon
RoHS
否
制造商
STMicroelectronics
晶体管极性
PNP 集电极—基极电压
VCBO
集电极—发射极最大电压
VCEO
- 40 V 发射极 - 基极电压
VEBO
- 6 V
增益带宽产品fT
直流集电极/Base Gain hfe
Min
100 A
安装风格
SMD/SMT
封装/箱体
PowerFLAT 2 x 2

BD250供应商更多...

更新时间：2025-8-10 11:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市盈慧通电子有限公司	BD250D	ST	2511	TO-3P	16900	电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价	询价
深圳市锦喆鸿电子有限公司	BD250C	FAIRCHI	21+	TO-3P	12588	原装正品,自己库存假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	BD250	ST/意法	23+	TO-218	90000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
现代芯城（深圳）科技有限公司	BD250		24+	N/A	56000	一级代理-主营优势-实惠价格-不悔选择	询价
艾睿（深圳）半导体有限公司	BD250	SPTECH	2447	TO-3PN	105000	30个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市威尔健半导体有限公司	BD250	POWER	23+	TO-218	50000	全新原装正品现货,支持订货	询价
深圳诚思涵科技有限公司	BD250	ROHM/罗姆	24+	SIP12	6512	公司现货库存,支持实单	询价
深圳市一线半导体有限公司	BD250		24+	TO-3PN	10000	全新	询价
深圳市向鸿伟业电子有限公司	BD250	SPTECH质超	2407+	TO-3	30098	全新原装!仓库现货,大胆开价!	询价
深圳市富芯乐电子科技有限公司	BD250C	ST	24+	TO-247	5000	只做原装正品现货欢迎来电查询15919825718	询价

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2019-8-5

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BD250晶体管资料

BD250产品属性

BD250供应商更多...

BD250芯片相关品牌

BD250规格书下载地址

BD250参数引脚图相关

BD250数据表相关新闻

BD433M5WFPJ-CZE2

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DdatasheetPDF页码索引