BD250晶体管资料

  • BD250别名:BD250三极管、BD250晶体管、BD250晶体三极管

  • BD250生产厂家:美国得克萨斯仪表公司

  • BD250制作材料:Si-PNP

  • BD250性质:低频或音频放大 (LF)_功率放大 (L)

  • BD250封装形式:直插封装

  • BD250极限工作电压:45V

  • BD250最大电流允许值:25A

  • BD250最大工作频率:<1MHZ或未知

  • BD250引脚数:3

  • BD250最大耗散功率:125W

  • BD250放大倍数

  • BD250图片代号:B-62

  • BD250vtest:45

  • BD250htest:999900

  • BD250atest:25

  • BD250wtest:125

  • BD250代换 BD250用什么型号代替:BD258/45,TIP36,3CD15B,

型号 功能描述 生产厂家 企业 LOGO 操作
BD250

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Bourns

伯恩斯

BD250

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current

ISC

无锡固电

BD250

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

POINN

BD250

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

BD250

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current

SAVANTIC

BD250

Silicon NPN Power Transistors

文件:146.37 Kbytes Page:3 Pages

SAVANTIC

BD250

Silicon NPN Power Transistors

文件:146.38 Kbytes Page:3 Pages

SAVANTIC

BD250

Silicon PNP Power Transistor

文件:145.24 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD250

Trans GP BJT PNP 45V 25A 3-Pin(3+Tab) SOT-93

NJS

25A BOSCH TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

WTE

Won-Top Electronics

25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

WTE

Won-Top Electronics

25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

WTE

Won-Top Electronics

25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

WTE

Won-Top Electronics

25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

WTE

Won-Top Electronics

25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

WTE

Won-Top Electronics

25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

WTE

Won-Top Electronics

25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

WTE

Won-Top Electronics

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current

SAVANTIC

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

POINN

isc Silicon PNP Power Transistor

DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current

ISC

无锡固电

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Bourns

伯恩斯

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Bourns

伯恩斯

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

isc Silicon PNP Power Transistor

DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current

ISC

无锡固电

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

POINN

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current

SAVANTIC

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

POINN

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current

SAVANTIC

isc Silicon PNP Power Transistor

DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current

ISC

无锡固电

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Bourns

伯恩斯

25A BOSCH TYPE PRESS-FIT DIODE

文件:30.14 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

文件:32.24 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

文件:30.14 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

文件:32.24 Kbytes Page:2 Pages

WTE

Won-Top Electronics

Pressfit Diodes

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

文件:30.14 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

文件:32.24 Kbytes Page:2 Pages

WTE

Won-Top Electronics

Pressfit Diodes

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

文件:32.24 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

文件:30.14 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

文件:30.14 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

文件:32.24 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

文件:32.24 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

文件:30.14 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

文件:32.24 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

文件:30.14 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

文件:32.24 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A BOSCH TYPE PRESS-FIT DIODE

文件:30.14 Kbytes Page:2 Pages

WTE

Won-Top Electronics

Silicon NPN Power Transistors

文件:146.37 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistor

文件:145.24 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:146.38 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:146.38 Kbytes Page:3 Pages

SAVANTIC

BD250产品属性

  • 类型

    描述

  • 型号

    BD250

  • 功能描述

    两极晶体管 - BJT 120W PNP Silicon

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-9-29 11:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
TO-126
8560
受权代理!全新原装现货特价热卖!
ST
23+
TO-126
50000
全新原装正品现货,支持订货
ST
24+
TO-218
15000
原装现货热卖
ST
25+
TO-3P
16900
原装,请咨询
ST
2511
TO-3P
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ST/意法
23+
TO-218
90000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
ST
25+
TO-218
20
原装正品,假一罚十!
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
SPTECH
2447
TO-3PN
105000
30个/管一级代理专营品牌!原装正品,优势现货,长期
POWER
23+
TO-218
50000
全新原装正品现货,支持订货

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