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BD250晶体管资料

BD250别名：BD250三极管、BD250晶体管、BD250晶体三极管
BD250生产厂家：美国得克萨斯仪表公司
BD250制作材料：Si-PNP
BD250性质：低频或音频放大（LF）_功率放大（L）
BD250封装形式：直插封装
BD250极限工作电压：45V
BD250最大电流允许值：25A
BD250最大工作频率：<1MHZ或未知
BD250引脚数：3
BD250最大耗散功率：125W
BD250放大倍数：
BD250图片代号：B-62
BD250vtest：45
BD250htest：999900
BD250atest：25
BD250wtest：125

BD250代换 BD250用什么型号代替：BD258/45,TIP36,3CD15B,

型号	功能描述	生产厂家企业	LOGO
BD250	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	BOURNS 伯恩斯	BOURNS
BD250	POWER TRANSISTORS(25A,125W) COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
BD250	Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	ISC 无锡固电	ISC
BD250	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	POINN	POINN
BD250	Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	SAVANTIC	SAVANTIC
BD250	Silicon NPN Power Transistors 文件：146.37 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
BD250	Silicon PNP Power Transistor 文件：145.24 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BD250	Silicon NPN Power Transistors 文件：146.38 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
BD250	Trans GP BJT PNP 45V 25A 3-Pin(3+Tab) SOT-93	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BD2500	25A BOSCH TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA	WTE Won-Top Electronics	WTE
BD2500G	25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA	WTE Won-Top Electronics	WTE
BD2501	25A BOSCH TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA	WTE Won-Top Electronics	WTE
BD2501G	25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA	WTE Won-Top Electronics	WTE
BD2502	25A BOSCH TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA	WTE Won-Top Electronics	WTE
BD2502G	25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA	WTE Won-Top Electronics	WTE
BD2503	25A BOSCH TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA	WTE Won-Top Electronics	WTE
BD2503G	25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA	WTE Won-Top Electronics	WTE
BD2504	25A BOSCH TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA	WTE Won-Top Electronics	WTE
BD2504G	25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA	WTE Won-Top Electronics	WTE
BD2505	25A BOSCH TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA	WTE Won-Top Electronics	WTE
BD2505G	25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA	WTE Won-Top Electronics	WTE
BD2506	25A BOSCH TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA	WTE Won-Top Electronics	WTE
BD2506G	25A GLASS PASSIVATED BOSCH TYPE PRESS-FIT DIODE Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA	WTE Won-Top Electronics	WTE
BD250A	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	POINN	POINN
BD250A	Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	SAVANTIC	SAVANTIC
BD250A	isc Silicon PNP Power Transistor DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	ISC 无锡固电	ISC
BD250A	POWER TRANSISTORS(25A,125W) COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
BD250A	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	BOURNS 伯恩斯	BOURNS
BD250B	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	BOURNS 伯恩斯	BOURNS
BD250B	POWER TRANSISTORS(25A,125W) COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
BD250B	isc Silicon PNP Power Transistor DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	ISC 无锡固电	ISC
BD250B	Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	SAVANTIC	SAVANTIC
BD250B	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	POINN	POINN
BD250C	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	POINN	POINN
BD250C	Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	SAVANTIC	SAVANTIC
BD250C	isc Silicon PNP Power Transistor DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current	ISC 无锡固电	ISC
BD250C	Complementary Power Transistor Description: Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emitter sustaining Voltage. VCEO(sus) = 100V (Min.) • DC Current Gain hFE = 25 (Min.) at IC = 1.5A • Current Gain Bandwidth Product fT = 3MHz (Min.) at IC = 1A	MULTICOMP 易络盟	MULTICOMP
BD250C	POWER TRANSISTORS(25A,125W) COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
BD250C	PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	BOURNS 伯恩斯	BOURNS
BD2500	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD2500	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD2500_06	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD2500_14	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD2501	Pressfit Diodes	WTE Won-Top Electronics	WTE
BD2501	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD2501	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD2501G	Pressfit Diodes	WTE Won-Top Electronics	WTE
BD2502	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD2502	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD2503	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD2503	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD2504	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD2504	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD2505	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD2505	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD2506	25A BOSCH TYPE PRESS-FIT DIODE 文件：32.24 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD2506	25A BOSCH TYPE PRESS-FIT DIODE 文件：30.14 Kbytes Page：2 Pages	WTE Won-Top Electronics	WTE
BD250A	Silicon PNP Power Transistor 文件：145.24 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BD250A	Silicon NPN Power Transistors 文件：146.38 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
BD250A	Silicon NPN Power Transistors 文件：146.37 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC

BD250产品属性

类型
描述
Configuration：
Single
Material：
Si
Maximum Collector Emitter Saturation Voltage：
\\1.8@1.5A@15A4@5A@25A\\
Maximum Collector Emitter Voltage：
45V
Maximum DC Collector Current：
25A
Maximum Emitter Base Voltage：
5V
Maximum Operating Temperature：
150°C
Maximum Power Dissipation：
125000mW
Type：
PNP

BD250供应商更多...

更新时间：2026-5-14 12:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市盈慧通电子有限公司	BD250D	ST	2511	TO-3P	16900	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
深圳市科芯源微电子有限公司	BD250F	FUJITSU/富士通	2026+	TO-3P	119	原装正品假一罚十!	询价
洪芯国际半导体（深圳）有限公司	BD250-ST	ST	26+	QFN	86720	全新原装正品价格最实惠假一赔百	询价
深圳市华来深电子有限公司	BD250-16	ST	23+	TO-126	8560	受权代理!全新原装现货特价热卖!	询价
贸泽芯城（深圳）电子科技有限公司	BD250F	ST/MOT/ON/PH	23+	TO-3P	8119	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
现代芯城（深圳）科技有限公司	BD250B		26+	N/A	65000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市华斯顿科技有限公司	BD250-16	ST	25+23+	TO-126	76092	绝对原装正品现货,全新深圳原装进口现货	询价
艾睿（深圳）半导体有限公司	BD250	SPTECH	2447	TO-3PN	105000	30个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市威尔健半导体有限公司	BD250F	FUJITSU/富士通	23+	TO-3P	50000	全新原装正品现货,支持订货	询价
深圳市高捷芯城科技有限公司	BD250B-S	Bourns Inc.	25+	SOT-93	20948	样件支持,可原厂排单订货!	询价

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DdatasheetPDF页码索引

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找IC，尽在114IC

BD250晶体管资料

BD250产品属性

BD250供应商更多...

BD250芯片相关品牌

BD250规格书下载地址

BD250参数引脚图相关

BD250数据表相关新闻

BD433M5WFPJ-CZE2

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DdatasheetPDF页码索引