BD243晶体管资料

  • BD243别名:BD243三极管、BD243晶体管、BD243晶体三极管

  • BD243生产厂家:美国无线电公司_美国得克萨斯仪表公司

  • BD243制作材料:Si-NPN

  • BD243性质:低频或音频放大 (LF)_功率放大 (L)

  • BD243封装形式:直插封装

  • BD243极限工作电压:45V

  • BD243最大电流允许值:6A

  • BD243最大工作频率:<1MHZ或未知

  • BD243引脚数:3

  • BD243最大耗散功率:65W

  • BD243放大倍数

  • BD243图片代号:B-10

  • BD243vtest:45

  • BD243htest:999900

  • BD243atest:6

  • BD243wtest:65

  • BD243代换 BD243用什么型号代替:BD595,BD605,TIP41,3DD67B,

BD243价格

参考价格:¥1.3607

型号:BD243B 品牌:Fairchild Semiconductor 备注:这里有BD243多少钱,2025年最近7天走势,今日出价,今日竞价,BD243批发/采购报价,BD243行情走势销售排行榜,BD243报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BD243

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

MOSPEC

统懋

BD243

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BD243

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

boca

博卡

BD243

NPN SILICON POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS ● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available ● -S Suffix Added to Part Number Indicates RoHS Compliance*

Bourns

伯恩斯

BD243

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type BD244/A/B/C APPLICATIONS ·For medium power linear and switching applications

SAVANTIC

BD243

Silicon NPN Power Transistors

DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C ·Complement to Type BD244/A/B/C APPLICATIONS ·Designed for use in general purpose

ISC

无锡固电

BD243

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

POINN

BD243

PLASTIC POWER TRANSISTORS

BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS

CDIL

BD243

Designed for Complementary Use with the BD244 Series

SILICON NPN POWER TRANSISTORS ● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available ● -S Suffix Added to Part Number Indicates RoHS Compliance*

Bourns

伯恩斯

BD243

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

BD243

Silicon NPN Power Transistor

文件:128.46 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD243

三极管

MOSPEC

统懋

BD243

Transistor

COMSET

PLASTIC POWER TRANSISTORS

BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS

CDIL

Designed for Complementary Use with the BD244 Series

SILICON NPN POWER TRANSISTORS ● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available ● -S Suffix Added to Part Number Indicates RoHS Compliance*

Bourns

伯恩斯

isc Silicon NPN Power Transistor

DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C ·Complement to Type BD244/A/B/C APPLICATIONS ·Designed for use in general purpose

ISC

无锡固电

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

boca

博卡

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type BD244/A/B/C APPLICATIONS ·For medium power linear and switching applications

SAVANTIC

NPN SILICON POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS ● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available ● -S Suffix Added to Part Number Indicates RoHS Compliance*

Bourns

伯恩斯

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

POINN

Designed for Complementary Use with the BD244 Series

SILICON NPN POWER TRANSISTORS ● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available ● -S Suffix Added to Part Number Indicates RoHS Compliance*

Bourns

伯恩斯

Designed for Complementary Use with the BD244 Series

SILICON NPN POWER TRANSISTORS ● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available ● -S Suffix Added to Part Number Indicates RoHS Compliance*

Bourns

伯恩斯

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

PLASTIC POWER TRANSISTORS

BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS

CDIL

isc Silicon NPN Power Transistor

DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C ·Complement to Type BD244/A/B/C APPLICATIONS ·Designed for use in general purpose

ISC

无锡固电

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

POINN

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively. ■ STMicroelectronics PREFERRED SALES

STMICROELECTRONICS

意法半导体

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —

Motorola

摩托罗拉

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

MOSPEC

统懋

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

boca

博卡

NPN SILICON POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS ● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available ● -S Suffix Added to Part Number Indicates RoHS Compliance*

Bourns

伯恩斯

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type BD244/A/B/C APPLICATIONS ·For medium power linear and switching applications

SAVANTIC

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

High Power Bipolar Transistor

Feature: •NPN plastic power transistors •General purpose amplifier and switching applications

MULTICOMP

易络盟

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=100V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 1.5V(Max) @IC=6A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

ISC

无锡固电

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Designed for Complementary Use with the BD244 Series

SILICON NPN POWER TRANSISTORS ● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available ● -S Suffix Added to Part Number Indicates RoHS Compliance*

Bourns

伯恩斯

PLASTIC POWER TRANSISTORS

BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS

CDIL

isc Silicon NPN Power Transistor

DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C ·Complement to Type BD244/A/B/C APPLICATIONS ·Designed for use in general purpose

ISC

无锡固电

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS ● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available ● -S Suffix Added to Part Number Indicates RoHS Compliance*

Bourns

伯恩斯

COMPLEMENTARY SILICON POWER TRANSISTOR

DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively. ■ STMicroelectronics PREFERRED SALES

STMICROELECTRONICS

意法半导体

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type BD244/A/B/C APPLICATIONS ·For medium power linear and switching applications

SAVANTIC

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

boca

博卡

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

MOSPEC

统懋

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —

Motorola

摩托罗拉

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

POINN

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively. ■ STMicroelectronics PREFERRED SALES

STMICROELECTRONICS

意法半导体

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Silicon NPN Power Transistor

文件:128.46 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

封装/外壳:TO-220-3 包装:管件 描述:TRANS NPN 60V 6A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN 60V 6A TO220-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

TRANS NPN 60V 6A TO-220

ONSEMI

安森美半导体

Silicon NPN Power Transistor

文件:128.46 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD243产品属性

  • 类型

    描述

  • 型号

    BD243

  • 功能描述

    两极晶体管 - BJT 65W NPN Silicon

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-9-30 9:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
2022+
5000
只做原装,价格优惠,长期供货。
ST
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
FAIRCHILD/仙童
23+
TO-220
50000
全新原装正品现货,支持订货
ONSEMI/安森美
24+
原厂原封可拆样
65258
百分百原装现货,实单必成
ST/意法
24+
TO-220
9000
只做原装,欢迎询价,量大价优
ST
24+
TO-220
5000
只做原装正品现货 欢迎来电查询15919825718
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
FAIRCHILD/仙童
2023+
TO220
6893
十五年行业诚信经营,专注全新正品
ON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网

BD243数据表相关新闻