POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively. ■ STMicroelectronics PREFERRED SALES

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

NPN SILICON POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS ● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available ● -S Suffix Added to Part Number Indicates RoHS Compliance*

COMPLEMENTARY SILICON POWER TRANSISTOR

DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively. ■ STMicroelectronics PREFERRED SALES

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type BD244/A/B/C APPLICATIONS ·For medium power linear and switching applications

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

Designed for Complementary Use with the BD244 Series

SILICON NPN POWER TRANSISTORS ● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available ● -S Suffix Added to Part Number Indicates RoHS Compliance*

PLASTIC POWER TRANSISTORS

BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS

isc Silicon NPN Power Transistor

DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C ·Complement to Type BD244/A/B/C APPLICATIONS ·Designed for use in general purpose

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively.

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=100V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 1.5V(Max) @IC=6A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

High Power Bipolar Transistor

Feature: •NPN plastic power transistors •General purpose amplifier and switching applications

6.0 A，100 V，NPN 双极功率晶体管

The 6 A, 100 V PNP Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. BD243B, BD243C (NPN); BD244B, BD244C (PNP) are complementary devices. • Collector - Emitter Saturation Voltage -VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc\n• Collector Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc (Min)BD243B, BD244B VCEO(sus) = 100 Vdc (Min) - BD243C, BD244C\n• High Current Gain Bandwidth ProductfT = 3.0 MHz (Min) @ IC = 500 mAdc\n• Compact TO-220 AB ;

封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS NPN 100V 6A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 100V 6A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TO-220 - Power Transistors and Darlingtons

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Complementary Silicon Plastic Power Transistors

文件：97.31 Kbytes Page：6 Pages

SEMICONDUCTORS

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Silicon NPN Power Transistor

文件：128.46 Kbytes Page：2 Pages

Complementary power transistors

文件：343.19 Kbytes Page：10 Pages

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

Complementary power transistors

文件：343.19 Kbytes Page：10 Pages

Complementary Silicon Plastic Power Transistors

文件：103.58 Kbytes Page：6 Pages

TRANS NPN 100V 6A

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS