N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-Channel Power MOSFET 40A, 60 V/100 V

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS™ process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

High Power,High Speed Applications

DESCRIPTION • Drain Current ID=40A@ TC=25℃ • Drain Source Voltage- : VDSS= 60V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.055Ω(Max) • High Power,High Speed Applications APPLICATIONS • Switching power supplies • UPS • Motor controls • High energy pulse circuits.

DUAL MOSFET DRIVER

• Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds • Output Supply Voltage Range up to 24 V • Low Standby Power Dissipation description The SN75372 is a dual NAND gate interface circuit designed to drive power MOSFETs from TTL inputs. It provides high current and vol

AVALANCHE ENERGY RATED N-CHANNEL POWER MOSFETS

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SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

RENESAS MCU

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Silicon Controlled Rectifier

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INTERCONNECT BATTERY HOLDERS

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Easy Identification and Tracing with 10-color Cable

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