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型号 功能描述 生产厂家 企业 LOGO 操作
IRF1407LPbF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

INFINEON

英飞凌

IRF1407LPBF

HEXFET짰 Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF1407LPbF

HEXFET® Power MOSFET

INFINEON

英飞凌

Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

IRF

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

AC/DC Voltage Level Meter

Features and Functions • The LB1407 and LB1417 are based on dB scale and linear scale respectively. • The input level is indicated in the form of a bar by means of 7 red/green LEDs. • The LED current is made variable with an external resistor. • An input amplifier is built in. • A wide range

SANYO

三洋

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability. ■ 30 MHz ■ 28 VOLTS ■ IMD −30 dB ■ COMMON EMITTER ■ GOLD METALLIZATIO

STMICROELECTRONICS

意法半导体

Low-Power, 16-Bit Multichannel DAS with Internal Reference,10-Bit DACs, and RTC

文件:1.11749 Mbytes Page:48 Pages

MAXIM

美信

更新时间:2026-5-20 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FSC
23+
NA
6500
全新原装假一赔十
IR
24+
TO-262
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
24+/25+
2000
原装正品现货库存价优
INTERNATIONAL RECTIFIER
25+
119
公司优势库存 热卖中!
VISHAY/威世
23+
ThroughHole
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
INTREC
23+
NA
2486
专做原装正品,假一罚百!
IR
24+
TO-262-3
2010
IR
23+
65480
INR
23+
TO-3
44353
##公司主营品牌长期供应100%原装现货可含税提供技术
INR
23+
TO-3
5000
原装正品,假一罚十

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