RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability. ■ 30 MHz ■ 28 VOLTS ■ IMD −30 dB ■ COMMON EMITTER ■ GOLD METALLIZATIO

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1407 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. FEATURES: • PG = 15 dB min. at 125 W/30 MHz • High linear power output • IMD3 = -30 dBc max. at 125 W(PEP) • Omnigold™ Metalization System

Trans RF BJT NPN 36V 20A 4-Pin(4+Tab) Case M-174

Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

AC/DC Voltage Level Meter

Features and Functions • The LB1407 and LB1417 are based on dB scale and linear scale respectively. • The input level is indicated in the form of a bar by means of 7 red/green LEDs. • The LED current is made variable with an external resistor. • An input amplifier is built in. • A wide range

Low-Power, 16-Bit Multichannel DAS with Internal Reference,10-Bit DACs, and RTC

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