IRF1407价格

参考价格:¥3.4662

型号:IRF1407PBF 品牌:INTERNATIONAL 备注:这里有IRF1407多少钱,2025年最近7天走势,今日出价,今日竞价,IRF1407批发/采购报价,IRF1407行情走势销售排行榜,IRF1407报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF1407

Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

IRF

IRF1407

N-Channel MOSFET Transistor

文件:338.76 Kbytes Page:2 Pages

ISC

无锡固电

IRF1407

Advanced Process Technology

文件:271.93 Kbytes Page:9 Pages

IRF

IRF1407

75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Infineon

英飞凌

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

HEXFET짰 Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

Infineon

英飞凌

HEXFET짰 Power MOSFET

Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti

IRF

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

HEXFET짰 Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

Infineon

英飞凌

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

Infineon

英飞凌

isc N-Channel MOSFET Transistor

文件:331.27 Kbytes Page:2 Pages

ISC

无锡固电

HEXFET® Power MOSFET

Infineon

英飞凌

Advanced Process Technology

文件:271.93 Kbytes Page:9 Pages

IRF

Advanced Process Technology

文件:271.93 Kbytes Page:9 Pages

IRF

Isc N-Channel MOSFET Transistor

文件:189.06 Kbytes Page:2 Pages

ISC

无锡固电

采用 D2-Pak 封装的 75V 单 N 沟道功率 MOSFET

Infineon

英飞凌

Advanced Process Technology

文件:259.029 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:259.029 Kbytes Page:12 Pages

IRF

RGB Video, High Flex, #26-4 Coax Stranded BC

Product Description RGB Video Coax, 4-26 AWG stranded bare copper conductors, foam HDPE insulation, Duofoil® +95% tinned copper braid shield, inner PVC jackets, flexible PVC jacket

BELDEN

百通

Six-Channel LED Backlight Driver with Integrated Boost and High Frequency Direct PWM Dimming

Features • VIN Range: 4.5V to 5.5V / 5.0V to 26.0V • LX Rated to 50V • Maximum IOUT: 180mA • Up to 92 Efficiency • High Efficiency Light-Load Mode • 6 LED Current Sinks up to 30mA/each ▪ ±2 Accuracy (21mA) ▪ ±2 Matching (21mA) • Flexible Configurations ▪ Disable or Parallel • Switching

SKYWORKS

思佳讯

Inductive Charging Set - 5V @ 500mA max

文件:187.2 Kbytes Page:3 Pages

Adafruit

ALUMINUM CHASSIS

文件:109.8 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

9.5 ohm RON, 16-Channel, Differential 8-Channel, 짹15 V/12 V/짹5 V iCMOS Multiplexers

文件:571.37 Kbytes Page:20 Pages

AD

亚德诺

IRF1407产品属性

  • 类型

    描述

  • 型号

    IRF1407

  • 制造商

    INTRSL

  • 制造商

    International Rectifier

  • 功能描述

    N CH MOSFET, 75V, 130A, TO-220AB, Transistor Polarity

更新时间:2025-12-14 15:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-220AB
10000
只做原装欢迎含税交易,假一赔十,放心购买
Infineon(英飞凌)
24+
TO-262
7828
支持大陆交货,美金交易。原装现货库存。
INFINEON
25+
TO-263
918000
明嘉莱只做原装正品现货
IR(国际整流器)
24+
N/A
8548
原厂可订货,技术支持,直接渠道。可签保供合同
INFINEON/英飞凌
17+
TO-263
8664
原装现货
INFINEON/英飞凌
25+
TO-220
32000
INFINEON/英飞凌全新特价IRF1407PBF即刻询购立享优惠#长期有货
IR
23+
TO-220AB
65400
INFINEON/IR
17+
800
TO-263-3 (D2PAK)
IR
25+
TO-263
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
Infineon(英飞凌)
24+
TO-220(TO-220-3)
5144
只做原装现货假一罚十!价格最低!只卖原装现货

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