Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

N-Channel MOSFET Transistor

文件：338.76 Kbytes Page：2 Pages

75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Advanced Process Technology

文件：271.93 Kbytes Page：9 Pages

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

HEXFET짰 Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

HEXFET짰 Power MOSFET

Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

HEXFET짰 Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

isc N-Channel MOSFET Transistor

文件：331.27 Kbytes Page：2 Pages

HEXFET® Power MOSFET

Advanced Process Technology

文件：271.93 Kbytes Page：9 Pages

Advanced Process Technology

文件：271.93 Kbytes Page：9 Pages

采用 D2-Pak 封装的 75V 单 N 沟道功率 MOSFET

Isc N-Channel MOSFET Transistor

文件：189.06 Kbytes Page：2 Pages

Advanced Process Technology

文件：259.029 Kbytes Page：12 Pages

Advanced Process Technology

文件：259.029 Kbytes Page：12 Pages

RGB Video, High Flex, #26-4 Coax Stranded BC

Product Description RGB Video Coax, 4-26 AWG stranded bare copper conductors, foam HDPE insulation, Duofoil® +95% tinned copper braid shield, inner PVC jackets, flexible PVC jacket

Six-Channel LED Backlight Driver with Integrated Boost and High Frequency Direct PWM Dimming

Features • VIN Range: 4.5V to 5.5V / 5.0V to 26.0V • LX Rated to 50V • Maximum IOUT: 180mA • Up to 92 Efficiency • High Efficiency Light-Load Mode • 6 LED Current Sinks up to 30mA/each ▪ ±2 Accuracy (21mA) ▪ ±2 Matching (21mA) • Flexible Configurations ▪ Disable or Parallel • Switching

ALUMINUM CHASSIS

文件：109.8 Kbytes Page：1 Pages

9.5 ohm RON, 16-Channel, Differential 8-Channel, 짹15 V/12 V/짹5 V iCMOS Multiplexers

文件：571.37 Kbytes Page：20 Pages

9.5 ohm RON, 16-Channel, Differential 8-Channel, 짹15 V/12 V/짹5 V iCMOS Multiplexers

文件：571.37 Kbytes Page：20 Pages