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AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

IRF

HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

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Ultra Low On-Resistance

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Advanced Process Technology

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Advanced Process Technology

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更新时间:2025-12-14 15:16:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
DIP
9600
原装现货,优势供应,支持实单!
IR
18+
D2-Pak
85600
保证进口原装可开17%增值税发票
IR
23+
TO-263-7
7000
IR
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
原装
1923+
TO263
8900
公司原装现货特价长期供货欢迎来电咨询
Infineon
24+
NA
3000
进口原装正品优势供应
IR
19+
TO263-7P
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
22+
TO-263-7
6000
终端可免费供样,支持BOM配单
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
IR
23+
TO263-7P
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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