型号 功能描述 生产厂家 企业 LOGO 操作

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

IRF

HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

IRF

55V 单个 n 通道 HEXFET Power MOSFET, 采用 7引脚 D2-Pak 封装

Infineon

英飞凌

Ultra Low On-Resistance

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ETCList of Unclassifed Manufacturers

未分类制造商

Advanced Process Technology

文件:253.22 Kbytes Page:13 Pages

IRF

Advanced Process Technology

文件:253.22 Kbytes Page:13 Pages

IRF

IRF1405ZS-7产品属性

  • 类型

    描述

  • 型号

    IRF1405ZS-7

  • 功能描述

    MOSFET 55V 1 N-CH HEXFET 4.9mOhms 150nC

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-15 17:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
25+
TO-263-7
18000
原厂直接发货进口原装
IR
25+23+
TO-263
20828
绝对原装正品全新进口深圳现货
INFINE0N
21+
D2PAK 7pin (TO-263 7pin)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
IR
22+
TO-263-7
12245
现货,原厂原装假一罚十!
IR
19+
TO-263-7
11200
IR
TO-263-7
9500
一级代理 原装正品假一罚十价格优势长期供货
IR
23+
TO-263
5000
原装正品,假一罚十
IR
18+
D2-Pak
85600
保证进口原装可开17%增值税发票
IR
24+
65230
IR
2447
TO-263-7
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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