N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

14A, 100V, 0.160 Ohm, N-Channel Power MOSFET

14A, 100V, 0.160 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs ar

N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

High Power,High Speed Applications

DESCRIPTION • Drain Current ID=14A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) • High Power,High Speed Applications APPLICATIONS • Switching power supplies • UPS • Motor controls • High energy pulse circuits.

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

Features: • Repetitive Avalanche Ratings • Dynamic dv/dt Rating • HermeticallySealed • Simple Drive Requirements • Ease ofParalleling

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)

Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior

高可靠性功率 MOSFET

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N-Channel Power MOSFETs, 20 A, 60-100 V

N-CHANNEL POWER MOSFET

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SEMICONDUCTORS

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N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast

AUTOMOTIVE MOSFET

Description\nSpecifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast sw

Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast

Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast

AUTOMOTIVE MOSFET ( VDSS = 20V , RDS(on) = 4.0m廓 , ID = 180A )

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N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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N?밅HANNEL POWER MOSFET FOR HI?밨EL APPLICATIONS

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HIGH POWER GENERAL USE INSULATED TYPE

• IT (AV) Average on-state current .......... 130A • VRRM Repetitive peak reverse voltage ........ 1200/1600V • VDRM Repetitive peak off-state voltage ........ 1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION

HIGH POWER GENERAL USE INSULATED TYPE

• IT (AV) Average on-state current .......... 130A • VRRM Repetitive peak reverse voltage ........ 400/800V • VDRM Repetitive peak off-state voltage ........ 400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 AP

HIGH POWER GENERAL USE INSULATED TYPE

• IT (AV) Average on-state current .......... 130A • VRRM Repetitive peak reverse voltage ........ 400/800V • VDRM Repetitive peak off-state voltage ........ 400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 AP

HIGH POWER GENERAL USE INSULATED TYPE

• IT (AV) Average on-state current .......... 130A • IF (AV) Average forward current .......... 130A • VRRM Repetitive peak reverse voltage ........ 400/800V • VDRM Repetitive peak off-state voltage ........ 400/800V • MIX DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E802

HIGH POWER GENERAL USE INSULATED TYPE

• IT (AV) Average on-state current .......... 130A • VRRM Repetitive peak reverse voltage ........ 400/800V • VDRM Repetitive peak off-state voltage ........ 400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 AP