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IRF130价格
参考价格:¥58.8190
型号:IRF130 品牌:INTERNATIONAL RECTIFIER 备注:这里有IRF130多少钱,2025年最近7天走势,今日出价,今日竞价,IRF130批发/采购报价,IRF130行情走势销售排行榜,IRF130报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF130 | N-Channel Power MOSFETs, 20 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ● | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRF130 | 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs ar | Intersil | ||
IRF130 | TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A) Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior | IRF | ||
IRF130 | N-CHANNEL POWER MOSFETS FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard) | Samsung 三星 | ||
IRF130 | High Power,High Speed Applications DESCRIPTION • Drain Current ID=14A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) • High Power,High Speed Applications APPLICATIONS • Switching power supplies • UPS • Motor controls • High energy pulse circuits. | ISC 无锡固电 | ||
IRF130 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS Features: • Repetitive Avalanche Ratings • Dynamic dv/dt Rating • HermeticallySealed • Simple Drive Requirements • Ease ofParalleling | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF130 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | ||
IRF130 | N-CHANNEL POWER MOSFET 文件:22.11 Kbytes Page:2 Pages | SEME-LAB Seme LAB | ||
N-Channel Power MOSFETs, 20 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ● | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?? Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast | IRF | |||
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?? Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast | IRF | |||
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?? Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast | IRF | |||
AUTOMOTIVE MOSFET ( VDSS = 20V , RDS(on) = 4.0m廓 , ID = 180A ) 文件:165.37 Kbytes Page:10 Pages | IRF | |||
N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS 文件:22.69 Kbytes Page:2 Pages | SEME-LAB Seme LAB | |||
N?밅HANNEL POWER MOSFET FOR HI?밨EL APPLICATIONS 文件:29.81 Kbytes Page:2 Pages | SEME-LAB Seme LAB | |||
1.3 Watts Axial Leaded Zener Diodes VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current | SUNMATE 森美特 | |||
GAMMA SEALS DESCRIPTION The BECA 130 profile is a gamma seal. Sealing happens when the axial force of the lip comes into contact with the housing. The metal part protects the rubber axial lip from external pollution. APPLICATIONS Axles Machine tools Electric motors Pumps Transmissions | FRANCEJOINT | |||
Screw connection The plug connector 130-A series was developed according to “White Goods Standard RAST 5 (Plug-Connection-Technology with a pitch of 5 mm). Due to its diverse coding possibilities, it offers maximum safety against incorrect plugging. For the coded version, a corresponding drawing or description | WECO | |||
THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY 文件:120.98 Kbytes Page:1 Pages | WITTEN | |||
THREE PHASE BRIDGE 文件:94.82 Kbytes Page:7 Pages | IRF |
IRF130产品属性
- 类型
描述
- 型号
IRF130
- 制造商
International Rectifier
- 功能描述
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3
- 制造商
International Rectifier
- 功能描述
TRANS MOSFET N-CH 100V 14A 2PIN TO-204AA - Bulk
- 制造商
International Rectifier
- 功能描述
N CH MOSFET 100V 14A TO-204AA
- 制造商
International Rectifier
- 功能描述
N CH MOSFET, 100V, 14A, TO-204AA
- 制造商
International Rectifier
- 功能描述
N CH MOSFET, 100V, 14A, TO-204AA; Transistor
- Polarity
N Channel; Continuous Drain Current
- Id
14A; Drain Source Voltage
- Vds
100V; On Resistance
- Rds(on)
180mohm; Rds(on) Test Voltage
- Vgs
10V; Threshold Voltage Vgs
- Typ
4V; No. of
- Pins
2;RoHS
- Compliant
No
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR(国际整流器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
IR |
05+ |
TO-3 |
880 |
原厂授权一级代理,专注汽车、医疗、工业、新能源! |
|||
IR/MOT |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
INFINEON/英飞凌 |
11+ |
TO-263 |
16685 |
原装进口无铅现货 |
|||
IR |
最新 |
1000 |
原装正品现货 |
||||
IR |
24+ |
TO-263 |
501252 |
免费送样原盒原包现货一手渠道联系 |
|||
IR |
23+ |
NA |
347 |
专做原装正品,假一罚百! |
|||
IR/VISHAY |
21+ |
TO-220AB |
10000 |
原装现货假一罚十 |
|||
IR |
24+ |
TO-3 |
4650 |
||||
IR |
24+ |
TO-263 |
14150 |
只做原厂渠道 可追溯货源 |
IRF130芯片相关品牌
IRF130规格书下载地址
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IRF130数据表相关新闻
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2013-2-8
DdatasheetPDF页码索引
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