Description

These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits.

● Low RDS(on)

● VGS Rated at ±20 V

● Silicon Gate for Fast Switching Speeds

● IDSS, VDS(on), Specified at Elevated Temperature

● Rugged

● Low Drive Requirements

● Ease of Paralleling