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IRF1302L中文资料

厂家型号

IRF1302L

文件大小

229.09Kbytes

页面数量

11

功能描述

Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A??

Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

IRF1302L数据手册规格书PDF详情

Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Benefits

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

IRF1302L产品属性

  • 类型

    描述

  • 型号

    IRF1302L

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)

更新时间:2025-10-12 16:30:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-262
8866
IR
2015+
TO-262
12500
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11846
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50000
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TO-262
246322
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IR
02+
TO-262
300
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IR
22+
TO-262
6000
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IR
23+
TO-262
44402
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IR
23+
TO-262
7000
IR
2016+
TO-220
6000
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