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型号 功能描述 生产厂家 企业 LOGO 操作
IRF1302L

Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast

IRF

IRF1302L

AUTOMOTIVE MOSFET

Description\nSpecifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast sw

INFINEON

英飞凌

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

MOTOROLA

摩托罗拉

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

MOTOROLA

摩托罗拉

TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm

This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplie

MOTOROLA

摩托罗拉

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS

Complementary NPN-PNP Silicon Power Bipolar Transistor The MJ3281A and MJ1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gain Complementary: — Gain Linearity from 100 mA to 7 A — Hi

MOTOROLA

摩托罗拉

MEDIUM POWER AMPLIFIER GaAs MMIC

文件:452.7 Kbytes Page:8 Pages

NJRC

日本无线

IRF1302L产品属性

  • 类型

    描述

  • 型号

    IRF1302L

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)

更新时间:2026-8-2 10:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
22+
TO-262
6000
终端可免费供样,支持BOM配单
IR
23+
TO-262
246322
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
23+
65480
IR
05+
原厂原装
4291
只做全新原装真实现货供应
IR
23+
TO-262
44402
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
2015+
TO-262
12500
全新原装,现货库存长期供应
IR
23+
TO-262
50000
全新原装正品现货,支持订货
IR
23+
TO-262
7000
FSC
23+
NA
6500
全新原装假一赔十
IR
02+
TO-262
300
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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