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位置：首页 > IC中文资料第10260页 > IPT

IPT价格

参考价格：￥4592.7700

型号：IPT0020A33R 品牌：Honeywell 备注：这里有IPT多少钱，2024年最近7天走势，今日出价，今日竞价，IPT批发/采购报价，IPT行情走势销售排行榜，IPT报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IPT008N06NM5LF

OptiMOSTM 5 Linear FET, 60 V

Features •Idealforhot-swapande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT009N06NM5

MOSFET OptiMOSTM5 Power-Transistor, 60 V

Features •100avalanchetested •Superiorthermalresistance •N-channel,normallevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT012N08N5

N-channel, normal level

Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT012N08N5

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent–ID=300A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpowersupplies ·Switchingconverters,motordriver,relaydriver

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IPT012N08NF2S

StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT013N08NM5LF

OptiMOSTM 5 Linear FET, 80 V

Features •Idealforhot-swapande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT015N10NF2S

StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT017N10NF2S

StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT017N12NM6

OptiMOSTM 6 Power-Transistor, 120 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitching •Pb-freeleadplating;RoHSco

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT017N12NM6

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=331A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.7mΩ(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IPT019N08N5

OptiMOSTM 5 Power-Transistor, 80 V

Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT020N10N5

OptiMOSTM 5 Power-Transistor, 100 V

Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT022N10NF2S

MOSFET StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT039N15N5

OptiMOS Power-Transister, 150 V

Features *N-channel *Verylowon-resistanceRds(on) *Superiorthermalresistance *100avalanchetested *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT044N15N5

OptiMOS 5 power-Transistor, 150 V

Features *N-channel *Verylowon-resistanceRds(on) *Superiorthermalresistance *100avalanchetested *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC1249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT054N15N5

OptiMOS 5 power-Transistor, 150 V

Features *N-channel *Verylowon-resistanceRds(on) *Superiorthermalresistance *100avalanchetested *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT063N15N5

OptiMOSTM 5 Power-Transistor, 150 V

Features •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT067N20NM6

MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT1

FLEXIBLE POWER SYSTEMS

•Board-to-boardanddiscretewirecablesystems •PowerMate®systemwithpolarizedguideposts •MiniMate®systemwithreliableTigerBuy™contacts •Individuallyshroudedcontacts •Elevatedstackheights •Optionalpolarization •Verticalandright-angleforparallel,perpendicular and

SamtecSamtec Inc.

申泰

Samtec
IPT129N20NM6

MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT60R022S7

600V CoolMOS짧 SJ S7 Power Device

MOSFET600VCoolMOS™SJS7PowerDevice IPT60R022S7enablesthebestpriceperformanceforlowfrequencyswitchingapplications.CoolMOS™S7boaststhelowestRdsonvaluesforaHVSJMOSFET,withdistinctiveincreaseofenergyefficiency. CoolMOS™S7isoptimizedfor“staticswitching”andhigh

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT60R080G7

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent–ID=29A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) APPLICATIONS ·SynchronousRectificationinSMPS ·Switchingconverters,motordriver,relaydriver ·PowerTools ·UPS ·MotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IPT65R040CFD7

650V CoolMOSª CFD7 SJ Power Device

Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature Benefits •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowe

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT65R060CFD7

650V CoolMOSª CFD7 SJ Power Device

Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature Benefits •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowe

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT65R080CFD7

650V CoolMOSª CFD7 SJ Power Device

Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature Benefits •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowe

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT65R099CFD7

650V CoolMOSª CFD7 SJ Power Device

Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature Benefits •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowe

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT65R125CFD7

650V CoolMOSª CFD7 SJ Power Device

Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature Benefits •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowe

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT65R155CFD7

650V CoolMOSª CFD7 SJ Power Device

Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature Benefits •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowe

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT65R190CFD7

650V CoolMOSª CFD7 SJ Power Device

Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature Benefits •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowe

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTC007N06NM5

MOSFET OptiMOSTM 5 Power-Transistor, 60 V

Features •Optimizedformotordrivesandbatterypoweredapplications •Optimizedfortopsidecooling •Highcurrentcapability •175°Crated •100avalanchetested •Superiorthermalperformance •N-Channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-2

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTC011N08NM5

MOSFET OptiMOSTM 5 Power-Transistor, 80 V

Features •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTC012N06NM5

MOSFET OptiMOSTM 5 Power-Transistor, 60 V

Features •Optimizedformotordrivesandbatterypoweredapplications •Optimizedfortopsidecooling •Highcurrentcapability •175°Crated •100avalanchetested •Superiorthermalperformance •N-Channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-2

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTC014N10NM5

MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTC017N12NM6

OptiMOSTM 6 Power-Transistor, 120 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •OptimizedforhighfrequencyswitchingandTopsidecooling •Pb-free

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTC030N12NM3

MOSFET OptiMOSTM3 Power-Transistor, 120 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •100avalanchetested •Optimizedformotordrivesandbatterypoweredapplications. •Optimizedfortopsidecooling. •Idealforbatterymanagementswitchapplication •Su

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTC039N15NM5

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTC044N15NM5

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTC054N15NM5

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTC063N15NM5

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTG007N06NM5

OptiMOS™ 5 Power-Transistor, 60 V

Features «Nechannel «Superiorthermalresistance «100avalanchetested «Pb-freeleadplating;RoHScompliant «Halogen-freeaccordingtoIEC61249-221

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTG011N08NM5

OptiMOSTM 5 Power-Transistor, 80 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhighfrequencyswitchingandsync.rec.

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTG014N10NM5

OptiMOSTM 5 Power-Transistor, 100 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhighfrequencyswitchingandsync.rec.

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTG017N12NM6

MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTG018N08NM5

OptiMOSTM 5 Power-Transistor, 80 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhighfrequencyswitchingandsync.rec.

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTG025N10NM5

OptiMOSTM 5 Power-Transistor, 100 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhighfrequencyswitchingandsync.rec.

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTG039N15NM5

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTG044N15NM5

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTG054N15NM5

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTG063N15NM5

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTG111N20NM3FD

OptiMOSTM 3 Power-Transistor, 200 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Fastdiode(FD)withreducedQrr •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Optimizedforhardcommutationruggedness

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPTG210N25NM3FD

OptiMOSTM 3 Power-Transistor, 250 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Fastdiode(FD)withreducedQrr •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Optimizedforhardcommutationruggedness

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPT-HH51-Y70152075

Handheld

PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd

倍加福（北京）过程自动化倍加福（北京）过程自动化控制设备有限公司

PF
IPT0001A33R-A

Integrated Pressure Transducer

文件：368.16 Kbytes Page：2 Pages

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

Honeywell
IPT0001D33R-A

Integrated Pressure Transducer

文件：368.16 Kbytes Page：2 Pages

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

Honeywell
IPT0001G33R

封装/外壳：模块 包装：散装 描述：SENS PRESSURE MODULE 1PSIG GAUGE 传感器，变送器 压力传感器、变送器

Honeywell Aerospace

Honeywell Aerospace

Honeywell Aerospace
IPT0001G33R-A

Integrated Pressure Transducer

文件：368.16 Kbytes Page：2 Pages

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

Honeywell
IPT0002A33R-A

Integrated Pressure Transducer

文件：368.16 Kbytes Page：2 Pages

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

Honeywell
IPT0002D33R

封装/外壳：模块 包装：散装 描述：SENS PRESSURE MODULE 2PSID DIFF 传感器，变送器 压力传感器、变送器

Honeywell Aerospace

Honeywell Aerospace

Honeywell Aerospace
IPT0002D33R-A

Integrated Pressure Transducer

文件：368.16 Kbytes Page：2 Pages

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

Honeywell
IPT0002G33R-A

Integrated Pressure Transducer

文件：368.16 Kbytes Page：2 Pages

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

Honeywell

IPT产品属性

  • 类型

    描述

  • 型号

    IPT

  • 制造商

    HONEYWELL

  • 制造商全称

    Honeywell Solid State Electronics Center

  • 功能描述

    Integrated Pressure Transducer

IPT供应商更多...

更新时间：2024-6-1 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
IPT010N08NM5
Infineon(英飞凌)
23+
NA/
8735
原厂直销,现货供应,账期支持!
询价
深圳市明嘉莱科技有限公司
IPT00XN03L
INFINEON/英飞凌
24+
HSOF-8
880000
明嘉莱只做原装正品现货
询价
天津市博通航睿技术有限公司
IPT010N08NM5ATMA1
INFINEON
82
询价
深圳市高捷芯城科技有限公司
IPT008N06NM5LFATMA1
Infineon(英飞凌)
23+
HSOF-8
9203
支持大陆交货,美金交易。原装现货库存。
询价
深圳市中联芯电子有限公司
IPT008N06NM5LFATMA1
Infineon
24+
PG-HSOF-8
9000
只做原装正品 有挂有货 假一赔十
询价
深圳市赛特兴科技有限公司
IPT010N08NM5
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
深圳市星佑电子有限公司
IPT010N08NM5
Infineon(英飞凌)
22+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
深圳市赛能新源半导体有限公司
IPT010N08NM5ATMA1
INFINEON/英飞凌
22+
N/A
60000
进口原装正品
询价
深圳市诺美思科技有限公司
IPT008N06NM5LFATMA1
Infineon
22+/23+
PG-HSOF-8
9800
原装进口公司现货假一赔百
询价
深圳宝隆芯业科技有限公司
IPT008N06NM5LFATMA1
Infineon Technologies
23+
SMD
67000
原装正品实单可谈 库存现货
询价

IPT芯片相关品牌

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  • grayhill
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  • KODENSHI
  • MEDER
  • MPD
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  • RENCO
  • SEI
  • TAI-SAW

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