位置：首页 > IC中文资料 > IPT65R099CFD7
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPT65R099CFD7 | 650VCoolMOSªCFD7SJPowerDevice Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature Benefits •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowe | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
封装/外壳：8-PowerSFN 包装：卷带（TR） 描述：MOSFET N-CH 650V 8HSOF 分立半导体产品 晶体管 - FET，MOSFET - 单个 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
650VCoolMOSªCFD7SJPowerDevice Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature Benefits •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowe | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
MOSFET650VCoolMOS짧CFD7ASJPowerDevice 文件：1.43124 Mbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
MOSFET650VCoolMOS짧CFD7ASJPowerDevice 文件：1.41557 Mbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
MOSFET650VCoolMOS짧CFD7ASJPowerDevice 文件：1.75875 Mbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
21+ |
PG-HSOF-8 |
8800 |
公司只作原装正品 |
|||
Infineon |
2023 |
4800 |
公司原装现货/支持实单 |
||||
Infineon/英飞凌 |
23+ |
PG-HSOF-8 |
7188 |
秉承只做原装 终端我们可以提供技术支持 |
|||
Infineon |
23+ |
PG-HSOF-8 |
15500 |
英飞凌优势渠道全系列在售 |
|||
Infineon(英飞凌) |
23+ |
TOLL |
9203 |
支持大陆交货,美金交易。原装现货库存。 |
|||
Infineon/英飞凌 |
23+ |
PG-HSOF-8 |
25630 |
原装正品 |
|||
Infineon Technologies |
23+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
Infineon/英飞凌 |
21+ |
PG-HSOF-8 |
6000 |
原装现货正品 |
|||
Infineon/英飞凌 |
23+ |
PG-HSOF-8 |
30000 |
原装正品公司现货,假一赔十! |
|||
Infineon/英飞凌 |
21+ |
PG-HSOF-8 |
6820 |
只做原装,质量保证 |
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IPS0151/IPS0151S得到充分保护三端智能功率MOSFET，具有过电流，超温，防静电保护和漏源积极clamp.These器件结合一个HEXFET®功率MOSFET和栅极驱动器。他们提供全面的保护和在恶劣的环境中所需的高可靠性。该驱动程序允许开关时间短通过关闭提供有效的保护当温度超过165oC的功率MOSFET或当漏电流达到35A。该设备重新启动一次输入循环。雪崩活动能力显着增强夹具和覆盖最感性负载demagnetizations。特点•在温度关机•在当前的关机•有源钳位
2012-11-14
DdatasheetPDF页码索引
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