650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

封装/外壳：8-PowerSFN 包装：卷带（TR） 描述：MOSFET N-CH 650V 8HSOF 分立半导体产品 晶体管 - FET，MOSFET - 单个

650V CoolMOS짧 CFD7A SJ Power Device

650V CoolMOS™ CFD7A SJ Power Device 650V CoolMOS™ CFD7A is Infineons latest generation of market leading automotive qualified high voltage CoolMOS™ MOSFETs. Potential applications Suitable for PFC and DC-DC stages for: • Unidriectional and bidirectional DC-DC converters, • On-Board battery Ch

650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature

650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100 avalanche tested • Best-in-class RDS(on) in SMD and THD packages

650V CoolMOS짧 CFD7A SJ Power Device

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