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型号 功能描述 生产厂家 企业 LOGO 操作
IPP65R110CFDA

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

INFINEON

英飞凌

IPP65R110CFDA

650V、N沟道、最大110mΩ、汽车MOSFET、TO-220、CoolMOS ™ CFDA

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provide • First 650V automotive qualified technology with integrated fast body diode on the market\n• Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n• Low gate charge value Q g\n• Low Q rr at repetitive commutation on body diode & low Q oss\n• Reduced turn on and turn of ;

INFINEON

英飞凌

丝印代码:65F6110;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

INFINEON

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.11Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations f

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • Suitable for resonant Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤110mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

INFINEON

英飞凌

IPP65R110CFDA产品属性

  • 类型

    描述

  • OPN:

    IPP65R110CFDAAKSA1

  • Qualification:

    Automotive

  • Package name:

    PG-TO220-3

  • VDS max:

    650 V

  • RDS (on) @10V max:

    110 mΩ

  • ID @25°C max:

    31.2 A

  • QG typ @10V:

    118 nC

  • Special Features:

    automotive

  • Polarity:

    N

  • VGS(th) min:

    3.5 V

  • VGS(th) max:

    4.5 V

  • Technology:

    CoolMOS™ CFDA

更新时间:2026-5-19 18:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
Infineon
原厂封装
9800
原装进口公司现货假一赔百
INFINEON
25+
假一赔十
30000
代理全新原装现货,价格优势
INFINEON
23+
TO220
10000
全新、原装
Infineon(英飞凌)
25+
TO-220-3
21000
原装正品现货,原厂订货,可支持含税原型号开票。
INFINEON/英飞凌
2025+
TO220
309
原装进口价格优 请找坤融电子!
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
Infineon(英飞凌)
23+
25900
新到现货,只有原装
INFINEON
22+
假一赔十
20000
公司只做原装 品质保障
Infineon
25+
PG-TO220-3
9000
只做原装正品 有挂有货 假一赔十

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