丝印代码：65F6110；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.11Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations f

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7\n 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation • 650V technology with integrated fast body diode\n• Limited voltage overshoot during hard commutation\n• Significant Qg reduction compared to 600V CFD technology\n• Tighter RDS(on) max to RDS(on) typ window\n• Easy to design-in\n• Lower price compared to 600V CFD technology\n\n优势:\n• Low switching ;

丝印代码：65R110F7；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS( dependency over temperature

集成快速体二极管的 650V CoolMOS ™ CFD7 超结 MOSFET 是谐振高功率拓扑的完美选择

\n优势:\n• 出色的硬换向稳健性\n• 总线电压提高，为设计提供额外安全裕度\n• 可实现更高的功率密度\n• 可在工业开关电源 (SMPS) 应用中实现卓越轻载效率\n• 可在工业开关电源 (SMPS) 应用中提高满载效率\n• 相较于市面上的替代产品，价格更具竞争力;

650V、N沟道、最大110mΩ、汽车MOSFET、TO-220、CoolMOS ™ CFDA

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provide • First 650V automotive qualified technology with integrated fast body diode on the market\n• Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n• Low gate charge value Q g\n• Low Q rr at repetitive commutation on body diode & low Q oss\n• Reduced turn on and turn of ;

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

N-Channel MOSFET Transistor

• DESCRITION • Suitable for resonant Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤110mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso