位置：首页 > IC中文资料 > IPX65R110CFD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPX65R110CFD | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 |   | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.11Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations f | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • Suitable for resonant Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤110mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Isc N-Channel MOSFET Transistor • FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISC 无锡固电 | | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
Infineon/英飞凌 |
21+ |
PG-TSDSON-8 |
6820 |
只做原装,质量保证 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
|||
xilinx |
25+ |
TQFP |
6800 |
||||
Infineon(英飞凌) |
2447 |
PG-TSDSON-8 |
105000 |
5000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
NEWINORIGINAL |
24+ |
DO-214 |
7300 |
新进库存/原装 |
|||
JAT |
1923+ |
SMB |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
JAT |
23+ |
SMB |
21580 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
xilinx |
25+ |
NULL |
6000 |
全新现货 |
|||
INFINEON/英飞凌 |
25+ |
TDSON-8 |
2832 |
就找我吧!--邀您体验愉快问购元件! |
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DdatasheetPDF页码索引
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