位置：首页 > IC中文资料 > IPX65R110CFD
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPX65R110CFD | MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.11Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-ChannelMOSFETTransistor •DESCRITION •SuitableforresonantSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤110mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2018+ |
PG-TSDSON |
11256 |
只做进口原装正品!假一赔十! |
|||
Ashining(泽耀科技) |
21+ |
19cm |
4750 |
中国航天工业部战略合作伙伴行业领导者 |
|||
6000 |
|||||||
INTERSIL |
2015+ |
DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
Infineon/英飞凌 |
23+ |
PG-TSDSON-8 |
30000 |
原装正品公司现货,假一赔十! |
|||
DO-214 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
Infineon/英飞凌 |
21+ |
PG-TSDSON-8 |
6000 |
原装现货正品 |
|||
Infineon |
21+ |
/ |
10000 |
10年磨一剑! |
|||
Infineon/英飞凌 |
21+ |
PG-TSDSON-8 |
8800 |
公司只作原装正品 |
|||
INFINEON |
22+23+ |
PG-TSDSON |
19834 |
绝对原装正品全新进口深圳现货 |
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DdatasheetPDF页码索引
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