位置：首页 > IC中文资料 > IPX65R110CFD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPX65R110CFD | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 |   | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.11Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations f | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • Suitable for resonant Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤110mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Isc N-Channel MOSFET Transistor • FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISC 无锡固电 | | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
PG-TSDSON-8 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
XILINX/赛灵思 |
23+ |
TQFP |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
JAT |
1923+ |
SMB |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
JAT |
23+ |
SMB |
21580 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
Infineon(英飞凌) |
2447 |
PG-TSDSON-8 |
105000 |
5000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
GISEMI |
23+ |
TransferLine |
50000 |
全新原装正品现货,支持订货 |
|||
NEWINORIGINAL |
24+ |
DO-214 |
7300 |
新进库存/原装 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Infineon/英飞凌 |
24+ |
PG-TSDSON-8 |
30000 |
原装正品公司现货,假一赔十! |
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IPX65R110CFD规格书下载地址
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DdatasheetPDF页码索引
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