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IPP60R600C6价格
参考价格：￥4.1767
型号：IPP60R600C6 品牌：Infineon Technologies 备注：这里有IPP60R600C6多少钱，2026年最近7天走势，今日出价，今日竞价，IPP60R600C6批发/采购报价，IPP60R600C6行情走势销售排行榜，IPP60R600C6报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPP60R600C6 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered dev | Infineon 英飞凌 |   | |
IPP60R600C6 | N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust dev | ISC 无锡固电 | | |
IPP60R600C6 | Metal Oxide Semiconductor Field Effect Transistor 文件：1.27669 Mbytes Page：18 Pages | Infineon 英飞凌 | | |
IPP60R600C6 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust dev | ISC 无锡固电 | | ||
Isc N-Channel MOSFET Transistor • FEATURES • With TO-220F Package • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applicatio | ISC 无锡固电 | | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered dev | Infineon 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor 文件：1.27669 Mbytes Page：18 Pages | Infineon 英飞凌 | |
IPP60R600C6产品属性
- 类型
描述
- 型号
IPP60R600C6
- 功能描述
MOSFET 600V CoolMOS C6 Power Transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
三年内 |
1983 |
只做原装正品 |
|||||
INFINEON/英飞凌 |
23+ |
TO-220 |
11220 |
英飞凌优势原装IC,高效BOM配单。 |
|||
INFINEON |
23+ |
MOSFET N-CH 600V 7.3A TO220 |
8000 |
只做原装现货 |
|||
原装 |
1923+ |
TO-220 |
8900 |
公司原装现货特价长期供货欢迎来电咨询 |
|||
INFINEON/英飞凌 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON/英飞凌 |
2022+ |
5500 |
原厂原装,假一罚十 |
||||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
24+ |
TO220 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
IPP60R600C6芯片相关品牌
IPP60R600C6规格书下载地址
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IPP60R600C6数据表相关新闻
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2019-9-12IPM6220-先进的三对偶便携式PWM和线性电源控制器
描述 该IPM6220提供了一个高度集成的功率控制和五个输出电压保护解决方案提供所需的高性能笔记本电脑的应用程序。该IC集成三个固定频率脉宽调制（PWM）控制器和两个沿监测和线性稳压器保护电路到一个24引脚SSOP封装。两个PWM控制器，调节系统的主要5V的和3.3V电压实施synchronousrectified降压转换器。同步整流和在轻负载时滞后有助于高效率的运作在输入电压和负载变化范围广。效率得到进一步增强，使用较低的MOSFET的的RDS（ON）作为电流检测元件。输入电压前馈坡道调制，电流模式控制，内部反馈补偿提供快速，稳定的处理负载瞬态输入电压中遇到的先进便携式计算
2013-2-19
DdatasheetPDF页码索引
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