IPP60R600C6价格

参考价格:¥4.1767

型号:IPP60R600C6 品牌:Infineon Technologies 备注:这里有IPP60R600C6多少钱,2025年最近7天走势,今日出价,今日竞价,IPP60R600C6批发/采购报价,IPP60R600C6行情走势销售排行榜,IPP60R600C6报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IPP60R600C6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered dev

Infineon

英飞凌

IPP60R600C6

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust dev

ISC

无锡固电

IPP60R600C6

Metal Oxide Semiconductor Field Effect Transistor

文件:1.27669 Mbytes Page:18 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust dev

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F Package • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applicatio

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered dev

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:1.27669 Mbytes Page:18 Pages

Infineon

英飞凌

IPP60R600C6产品属性

  • 类型

    描述

  • 型号

    IPP60R600C6

  • 功能描述

    MOSFET 600V CoolMOS C6 Power Transistor

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-15 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
3261
原装现货,当天可交货,原型号开票
INFINEON
2016+
TO-220
18750
公司只做原装,假一罚十,可开17%增值税发票!
Infineo
24+
TO220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INFINOEN
25+
TO220
54648
百分百原装现货 实单必成 欢迎询价
INFINEON
11+
TO220
8000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon(英飞凌)
23+
-
19850
原装正品,假一赔十
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
INFINEON
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
英飞凌
21+
TO220
10000
原装现货假一罚十
Infineon/英飞凌
1926+
TO-220F
6852
只做原装正品现货!或订货假一赔十!

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