IPB60R600C6价格

参考价格:¥3.9151

型号:IPB60R600C6 品牌:Infineon 备注:这里有IPB60R600C6多少钱,2026年最近7天走势,今日出价,今日竞价,IPB60R600C6批发/采购报价,IPB60R600C6行情走势销售排行榜,IPB60R600C6报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IPB60R600C6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered dev

Infineon

英飞凌

IPB60R600C6

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

IPB60R600C6

Metal Oxide Semiconductor Field Effect Transistor

文件:1.27669 Mbytes Page:18 Pages

Infineon

英飞凌

IPB60R600C6

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust dev

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F Package • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applicatio

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered dev

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:1.27669 Mbytes Page:18 Pages

Infineon

英飞凌

IPB60R600C6产品属性

  • 类型

    描述

  • 型号

    IPB60R600C6

  • 功能描述

    MOSFET 600V CoolMOS C6 Power Transistor

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-2 11:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
23+
TO-263
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
INFINEON/英飞凌
23+
TO-263
11220
英飞凌优势原装IC,高效BOM配单。
INFINEON/英飞凌
23+
D2PAK(TO-263)
50000
全新原装正品现货,支持订货
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
INFINEON
24+
TO-263
8500
原厂原包原装公司现货,假一赔十,低价出售
INFINEON
24+
D2PAK(TO-263)
5000
只做原装公司现货
INFINEON
21+
D2PAK(TO-263)
10000
原装现货假一罚十
Infineon
24+
NA
3000
进口原装正品优势供应
Infineon Technologies
25+
30000
原装现货,支持实单
英飞翎
17+
D2PAK(TO-263)
31518
原装正品 可含税交易

IPB60R600C6数据表相关新闻