IPB60R600C6价格

参考价格:¥3.9151

型号:IPB60R600C6 品牌:Infineon 备注:这里有IPB60R600C6多少钱,2026年最近7天走势,今日出价,今日竞价,IPB60R600C6批发/采购报价,IPB60R600C6行情走势销售排行榜,IPB60R600C6报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IPB60R600C6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered dev

Infineon

英飞凌

IPB60R600C6

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

IPB60R600C6

Metal Oxide Semiconductor Field Effect Transistor

文件:1.27669 Mbytes Page:18 Pages

Infineon

英飞凌

IPB60R600C6

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust dev

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F Package • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applicatio

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered dev

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:1.27669 Mbytes Page:18 Pages

Infineon

英飞凌

IPB60R600C6产品属性

  • 类型

    描述

  • 型号

    IPB60R600C6

  • 功能描述

    MOSFET 600V CoolMOS C6 Power Transistor

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-2 8:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
23+
TO-263
89630
当天发货全新原装现货
Infineon Technologies
21+
D2PAK(TO-263AB)
1000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
INFINEON/英飞凌
22+
SOT-263
100000
代理渠道/只做原装/可含税
INFINEON/英飞凌
22+
D2PAK(TO-263)
90583
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
INFINE0N
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
INFINEON/英飞凌
24+
NA/
31773
原装现货,当天可交货,原型号开票
INFINEON
24+
TO-263
8500
原厂原包原装公司现货,假一赔十,低价出售
INFINEON
23+
7000
Infineon(英飞凌)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞

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